漏击穿电压 meaning in Chinese

drain breakdown voltage

Drain breakdown voltage
漏击穿电压
In this paper , the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation . the measure which can improve the stability of sulfur passivation is proposed
本论文通过对gaasmesfet击穿机理和硫钝化机理的研究，用负电荷表面态理论，解释了gaasmesfet动态击穿特性及硫钝化后栅漏击穿电压增大、源漏饱和电流减小的机理，提出了改善硫钝化稳定性的措施。