栅氧化物 meaning in Chinese
gate oxide
Examples
- Xing su ( microelectronics and solid state electronics ) directed by prof . lin chenlu the fast development of information technology requires integrated circuit to be greater integrated , faster functioned , and lower power - consumed , that lead to continuous shrinkage of mos and dram feature size . and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit
日益增长的信息技术对更高集成度、高速、低功耗集成电路的需求，驱使晶体管的尺寸越来越小，随之而来的问题是作为mos栅氧化物和dram电容介质的sio _ 2迅速减薄，直逼其物理极限。