栅氧化层 meaning in Chinese
gate oxide
Examples
- A new physical model of tddb of ultra - thin gate oxides is presented on the bases of above analysis
为超薄栅氧化层的经时击穿建立了一个新的物理模型。 - A new hot - carrier - induced tddb model of ultra - thin gate oxide is reported in this dissertation
本文提出了一个全新的热载流子增强的超薄栅氧化层经时击穿模型。 - A detailed theory analysis is made and a two - step breakdown model of ultra - thin gate oxide is presented
对上述实验现象进行了详细的理论分析，提出了超薄栅氧化层经时击穿分两步。 - In this experiment , we prepare hydrogenation by pecvd after deposition of silicon nitride thin film for gate insulator of tft
本实验在沉积栅氧化层后立即用pecvd进行多晶硅的氢化处理。 - Hot - carrier induced oxide breakdown shows different characteristics compared with that induced by conventional fn stress
与通常的fn应力实验相比较，热载流子导致的超薄栅氧化层击穿显示了不同的击穿特性。