四方畸变 meaning in Chinese

tetragonal distortion

According to the requirement of innovation engineering in chinese academy of sciences , the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon , and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon , including the microstructure , ciystallinity and surface morphology , has been studied systematically . it is found that the porous silicon and substrate have the same orientation and share a coherent boundary . but at the edge of pores , the lattice relaxes , which induces xrd peak moving of porous silicon
Soi技术和多孔硅纳米发光技术研究是当今微电子与光电子研究领域的前沿课题，本文根据科学院创新工程研究工作的需要，开展了多孔硅外延层转移eltran - soi新材料制备与改性多孔硅发光性能的研究，获得的主要结果如下：系统研究了硅片掺杂浓度、掺杂类型和阳极氧化条件等因素对多孔硅结构、单晶性能和表面状态的影响，发现多孔硅与衬底并不是严格的四方畸变，在多孔硅/硅衬底的界面上，多孔硅的晶格与衬底完全一致，但在孔的边缘，多孔硅的晶格发生弛豫。