压晶体管 meaning in Chinese
piezoelectric effect
Examples
- Semiconductor discrete device . detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes
半导体分立器件gp gt和gct级3dg182型npn硅小功率高反压晶体管.详细规范 - So to understand the negative resistance effect mechanism existing in the base - region of high - reverse - voltage transistor has great theory values and extensive application potential
因此搞清镓基区高反压晶体管负阻of存在的机理，具有重大的理论价值，潜在着广阔的应用前景。 - With the development of doping technology , the formation of the base region in high - voltage transistor can be made by b diffusion technology , b - a1 paste - layer diffusion technology , close - tube ga - diffusion technology and open - tube gallium - diffusion technology
随着掺杂工艺的不断发展，高反压晶体管基区的形成经历了扩硼工艺、硼铝涂层扩散工艺、闭管扩镓工艺到开管扩镓工艺的发展。