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Home > chinese-english > "隙宽" in English

English translation for "隙宽"

gap length

Related Translations:
活塞环隙:  piston ring gap
加速隙:  acceleration gap
棒隙:  rod gap
公隙:  clearance
断隙:  fault crevice
胀隙:  clearance for expansion; clearance of expansion
光隙:  light slit
法隙角:  normal clearance angle
弯曲离隙:  bend relief
帧隙分配:  frame slot assignment
Example Sentences:
1.Zinc oxide , zno , a wide direct - gap semiconductor , attracts as much attention as gan in photoelectric research field
Zno ,作为一种直接带隙宽禁带半导体材料,是继gan之后光电研究领域又一热门的研究课题。
2.By analyzing actual cases and simulating finite element of random fracture through computer , the frequency hydraulic aperture falls within 48 ~ 50 % , i . e . eh = e48 ~ e50
通过现有研究成果的实例分析和随机裂隙的计算机有限元模拟,相应于水力隙宽的频率在48 ~ 50 %内,即eh = e48 ~ e50 。
3.According to the existing studies of the basic law of fracture seepage , there are two sharp contrastive relations between seepage discharge and aperture : super - cubic and sub - cubic . similarly , there are also two opposite relations between seepage discharge and relative roughness : positive and negative relations
2 、现有的裂隙渗流基本规律的研究成果中,渗流量与隙宽出现两种截然相反的关系:超立方和次立方关系;渗流量与相对粗糙度也存在两种相反的关系:正相关和负相关关系。
4.Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors , bulk - acoustic - wave devices , surface - acoustic - wave devices , varistors , light emitting , light detecting devices and so on . undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films
Zno是一种新型的直接带隙宽禁带半导体材料,具有六方纤锌矿结构,较高的激子束缚能( 60mev ) ,较低的电子诱生缺陷和阈值电压低等优点,在uv探测器、蓝紫光led和ld等光电子器件领域有巨大的应用潜景。
5.In this dissertation , the author presents a model of transforming element fracture net into element equivalent hydraulic conductivity tensor . this model can effectively reflect the obvious anisotropy and non - homogeneity of fracture rock seepage and makes it easier to simulate the various aperture fissure and display the fundamental characteristics of discrete fissure net . in addition , the model is can also make the best use of the sound theoretic foundation of equivalent continuum model
< wp = 5 > 5 、本文提出将单元裂隙网络转化为等效单元渗透张量的裂隙网络转换模型(单元网络模型) ,具有真正体现裂隙岩体渗流明显的各向异性和显著的非均质性、易于模拟变隙宽裂隙、基本显示岩体裂隙网络渗流的基本特点、充分利用连续介质模型雄厚的理论基础等特点。
6.With the development of science and technology , more and more oxide crystals are synthesized by more and more advanced technique , the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded . corundum dopped with impurity not only is cherished because of it ' s beautiful appearance , but also is used in the fields such as electrotechnics , mechanism , laser , the optic apparatus and the underlay of semiconductor . sapphire dopped with ti3 + is the best material of the tunable solid laser . zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3 . 37ev ) . the excited emission in zno crystal at room temperature has been found , so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature
含有少量杂质的刚玉晶体( - al _ 2o _ 3 )不仅由于其色泽艳丽成为人们珍爱的名贵宝石,而且由于它具有的优异性能,被广泛应用于电工、机械、激光器,光学器件和半导体衬底材料。钛蓝宝石是目前最优异的固体宽带调谐激光材料,用于制作飞秒脉冲可调谐激光器。氧化锌晶体是直接带隙宽禁带半导体材料(禁带宽度3 . 37ev ) ,现已发现具有室温下受激发射特性,有可能实现室温下半导体紫外发光。
7.By using the aperture curve and roughness curve , the author of the dissertation has put forward the concepts of frequency hydraulic aperture and frequency roughness for the first time . of the two concepts , the first or frequency hydraulic aperture has got some advantages of its own in the seepage analysis
3 、本文首次利用宽配和糙配曲线,提出频率隙宽和频率粗糙度的概念,特别是频率水力隙宽的提出,为解决现有隙宽应用中出现的局限性具有极大的帮助作用。
8.Characterized by wide band gap , high breakage electric field , high thermal conductivity , high saturated electron mobility , cubic silicon carbide ( 3c - sic ) , considered as one of the most promising wide band gap semiconductors , is widely utilized in high temperature , high frequency and large power semiconductor devices
3c - sic被誉为最有潜力的宽禁带半导体材料,具有带隙宽、临界击穿电场高、热导率高、饱和电子漂移速度大等优点,是高温、高频、高功率半导体器件的首选材料。
Similar Words:
"隙卡" English translation, "隙孔" English translation, "隙孔板" English translation, "隙孔符号" English translation, "隙孔校正" English translation, "隙裂" English translation, "隙裂,罅裂" English translation, "隙溜比" English translation, "隙流" English translation, "隙流束源" English translation