| 1. | State - of - the - art of the on - chip copper interconnect technology for ulsi ' s
集成电路片内铜互连技术的发展 |
| 2. | Copper interconnection system
铜互连系统 |
| 3. | The main purpose of the article is to study the reliability of copper interconnection
本论文研究了ulsi中铜互连的可靠性问题。 |
| 4. | Also , we simulated the electrical and mechanical characters of copper interconnection
此外，还进行了铜互连的电学和力学模拟。 |
| 5. | The snam results of local stress distribution are in close agreement with the results of computer simulation
利用计算机模拟了温度场变化引起的铜互连线中热应力分布。 |
| 6. | In many issues of the reliability of copper interconnection , we place the emphasis on electromigration and stress migration
在铜互连可靠性的几个主要问题中，重点针对互连中的电迁徙和应力迁徙进行了探讨。 |
| 7. | The mechanical simulation compared the stress distribution in copper lines and pore , with the result that the maximum stress locates in the corner
在力学模拟过程中，计算了铜互连线和通孔的热应力的分布。 |
| 8. | Studies on the stress of copper interconnects include the stress measurement by xrd , computer simulation and observation the local stress distribution with snam
利用薄膜应力测试分布仪和xrd测量硅基铜膜及铜互连线薄膜宏观应力。 |
| 9. | On the other hand , tddb experiments of copper interconnection have been taken to prove the performance improvement of interconnect by the use of low - k dielectric
试验方面则进行了铜互连线的tddb试验，来验证低k介质对互连性能的改善。 |
| 10. | In a word , this paper has made a common and deep analysis of interconnect delay and a whole depiction of improvement methods for interconnect delay
总之，本文对ulsi铜互连延时进行了普遍和深入的分析，对改善延时的方法也进行了全面的阐述。 |
