| 1. | Quantum confinement effects of the lowest conduction band states in semiconductor quantum dots
半导体量子点最低导带态的量子限制效应 |
| 2. | Beale model , diffusion confinement model and quantum confinement effect model are used to explain how porous silicon comes into being
对于多孔硅是怎样形成的问题，现在主要有beale模型、扩散限制模型和量子限制模型进行解释。 |
| 3. | The nanometer effect of the pores , which increased surface area and caused the failure of conglomeration of dbo - ppv polymer , can lead to the 90nm blue shift of the pl peaks of dbo - ppv
这一结果确认了多孔硅的跃迁过程主要是由量子限制效应决定，复合过程受表面态影响。 |
| 4. | In low - dimension structure , the exciton binding energy will be lager than bulk material because of quantum effects , so excitons play an important role in optical characteristics of low - dimension zno
在低维结构中，由于量子限制效应，激子束缚能会变得更大，因而在低维zno材料中，激子发光在其光学特性中起着举足轻重的作用。 |
| 5. | To sum up , two types of model have priority in explaining the origin and mechanism of visible pl in si - base light - emitting materials . but in view of the reported results , the properties of materials are badly influenced by preparation process
归纳起来，其发光机制以量子限制效应和发光中心两种模型为主；但就报道的结果而言，材料的发光特性都严重地依赖于样品的制备工艺过程，经不同的工艺过程制备的样品，其发光特性差别甚大。 |
| 6. | The complex model of luminescence centers and quantum confinement has been proposed to interpret the origin of the green and red - emitting of the ps after modification . the deduction is supported by analyzing the morphology and the surface species of the modified samples through afm , sem , and ftir , xps
通过afm 、 sem及ftir 、 xps对这两种多孔硅样品进行表面形貌和化学成分分析，采用发光中心（ lc ）量子限制效应的复合模型对上述修饰多孔硅的pl峰移现象进行了理论说明。 |
| 7. | Ps radiation mechanism has been discussed and investigated for many years and many theoretical models have been proposed to describe photoluminescence in porous silicon , for instance quantum confinement effect model , polysilanes model , siloxen and its derivant , surfacial states model and quantum confinement - light center model etc . in addition , study status of ps at present is addressed and applied problems in some fields are analyzed in this section
多年来，人们对多孔硅发光机理一直进行着坚持不懈的探讨和研究，提出了许多种解释多孔硅层( psl )发光的模型，典型的有下列几种：量子限制模型、硅-氢键或多硅烷( polysilanes )的发光、硅氧烯及其衍生物的发光、表面态模型和量子限制-发光中心模型。 |
| 8. | The performance of modulators employing mqw is governed by the quantum confined stark effect . in order to simplify the analysis of mqw , we obtain an explicit formula concerning the correlations between the gaas / gaalas quantum well widths of finite potential barrier structure and those of infinite potential barrier structure under the condition that the ground state energies are equal at zero bias states . then the transfer matrix method is used to investigate the optical field distribution in the mqw waveguide based on five - step asymmetric coupled quantum well structure that is really used in the modulator
本论文首先根据量子限制stark效应，发展了等效宽度思想，提出了把单量子阱结构的有限深势阱的分析转化为无限深势阱模型的显式公式，从而大大简化了电场下量子阱结构的分析；接着利用转移矩阵，把周期性的量子阱结构简化为三层结构，得到了实际采用的非对称三阱结构量子阱的场分布，并讨论了量子阱结构的偏振特性。 |
| 9. | As for the pl mechanism , except the red band , the rest are all originated from luminescence defects related to impurity , and the luminescence centers are affected by configuration of impurities , while the red emitting band may attribute to the quantum confinement effect of nano - si , but will also rely on its interface characteristic
就发光机制而言，除红光宽带外，均起源于氧、氮掺杂引起的缺陷发光中心，发光中心受杂质组态影响，红光宽带可能联系到量子限制效应，同时还依赖于界面特性。 |
| 10. | The size of the zno nanocrystal grain was so little that the quantum confinement effect should be considered . that makes the band gap wide . atom transfer rate is affected by the substrate temperature , and the average size of the zno nano crystal grain increases with the increasing substrate temperature resulting in the red shift of pl emission position and the narrowness of pl fwhm
低温生长的氧化锌晶粒小，考虑到量子限制效应，禁带宽较大；衬底温度影响吸附原子迁移能力，随着温度升高，晶粒的尺寸增大，分布变的均匀，因而发光峰位随着衬底温度的升高而红移，发光的半高宽变小。 |
