English translation for "短沟道"

short channel

Example Sentences:

	1.	We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect 在考虑了各种散射效应对迁移率的影响后，提出了短沟道most表面载流子迁移率的温度模型。
	2.	So it is valuable to research the high temperature characteristic of microelectronics devices . this paper discussed the electrical characteristic of short channel most at very high temperature 本文以短沟道most电学参数的温度特性为研究对象，对高温短沟道most的电学特性进行了深入的探讨。
	3.	This paper chooses bsim3 ( berkeley short - channel igfet model ) the model to be extracted , which is for short channel mos field effect transistor specially . these works are presented in this paper . 1 本论文选取目前业界占主流地位的bsim3 ( berkeleyshort - channeligfetmodel )为将要提取的模型，它是专门为短沟道mos场效应晶体管而开发的一种模型。
	4.	We discussed the influence of channel - length modulation effect and dibl effect to temperature behavior of source - drain current , gave a expressions for studying the temperature characteristic of source - drain current , and deduced a ztc point expression 研究了沟长调制效应和漏致势垒降低效应对漏源电流温度特性的影响，给出了一个用于研究漏源电流温度特性的电流公式；并推导了短沟道most的ztc点公式。
	5.	We deduced a expressions for threshold voltage temperature coefficient of short channel most . and found that the coefficient is almost unchanged in a quite wide temperature range which is higher than the room temperature , but it increased sharply at high temperature 推导了了一个短沟道most阈值电压温度系数表达式；发现短沟道most阈值电压温度系数在高于室温的一个较宽的温区内近似不变，但在温度较高时迅速增大。
	6.	The source drain extension ( sde ) structure and its reliability are thoroughly studied . first , it is shown that the sde structure can suppress short channel effect effectively and the parasitic resistance at the sde region has an effect on performance . it is proposed that increasing the dose condition in the sde region can reduce the parasitic resistance and should be adopted to achieve high performance for deep submicron devices 本文对深亚微米源漏扩展mos器件结构及其可靠性进行了深入研究，首先通过仿真验证了源漏扩展( sde )结构对短沟道效应的抑制， sde区寄生电阻对器件性能的影响以及sde区掺杂浓度的提高对器件性能的改善，指出了器件尺寸进一步减小后，提高源漏扩展区掺杂浓度的必要性。
	7.	The model of threshold voltage solves the problems of nonuniformly doped channel , short channel effect , implantation for adjusting threshold voltage , edge capacitance of gate , etc . not only the model can be used in ldmos , but it can perfectly describe the short channel effect of threshold voltage for all other mos devices 其中，阈值电压模型解决了沟道非均匀掺杂、短沟道效应，调阈值注入，栅边缘电容等问题。该模型不仅适用于ldmos ，也可以很好地描述所有的mos器件阈值电压的短沟道效应，严格证明了短沟道效应会引起阈值电压的减小。
	8.	Compared with the similar research results , the weighted control ic here has the following characteristics : ( 1 ) the circuit structure is simpler ; ( 2 ) the chip ' s fabrication is compatible with standard cmos process ; ( 3 ) n - mosfets with high w / l ratio and short channels are used for weighting and output to reduce the insertion loss ; ( 4 ) the weighting factor varies in a relatively wide range with the controlling signals ; ( 5 ) input and output impedance approach 50 in low frequency ( e . g . 50mhz ) , while in higher frequency they slightly deviate from 50 , hence the energy reflection lower than 0 . 1 ; ( 6 ) it completes the functions of sampling , weighting , controlling and summing of high frequency analog signals 它的加权控制电路与已报道的相关电路相比具有如下特点：电路结构简单；制造工艺与普通cmos工艺兼容：短沟道，高宽长比的nmos晶体管具有低的通导电阻，将其作为加权、输出器件可降低由电路引起的插入损耗；改变加权信号，可实现权值在较大范围内的连续变化；输入、输出阻抗在低频(如50mhz )下接近50 ，而在高频下略有偏离50 ，但反射系数均低于0 . 1 ；实现了对高频信号的取样、加权、控制、叠加功能的迭加。
	9.	This paper also presented the structure of soi bjmosfet and discussed and analyzed the advantages of this device by comparing with the bulk bjmosfet . its advantages are as fellow : no latch - up effect , better capability of resisting invalidation , much smaller parasitic capacitance , weaker hot - carrier effect and short - channel effects , and simpler technics , and so on 通过与体硅bjmosfet比较，讨论和分析了soibjmosfet的优点：无闩锁效应、抗软失效能力强、寄生电容大大降低、热载流子效应减弱、减弱了短沟道效应、工艺简单等。
	10.	Based on the hydrodynamic energy transport model , the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied . the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth . research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ) , the threshold voltage increases , the sub - threshold characteristics and the drain current driving capability degrade , and the hot carrier immunity becomes better in deep - sub - micron pmosfet . the short - channel - effect suppression and hot - carrier - effect immunity are better , while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow . so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet 基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅pmosfet性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高

Similar Words：

"短弓状纤维" English translation, "短共有重复序列超基因家族" English translation, "短钩拳" English translation, "短钩须鳎" English translation, "短沟" English translation, "短沟道场效应晶体管" English translation, "短沟对虾" English translation, "短沟蜷螺属" English translation, "短沟蜷属" English translation, "短古柏线虫" English translation