Unfortunately , though the lifetime control technology reduces the stored charge , it increases the forward voltage drop ( vr ) and the reverse leakage current ( i , ) . therefore , si pin diode cannot realize a good trade - off in qs - vf - i , - . the appearance of sige material and sige / si hetero - junction technology has changed this situation 但少子寿命控制技术在减少存贮电贺q _ s的同时，也增大了正向通态压降v _ f ，和反向漏电流i _ r ，因此很难实现qs - v _ f - i _ r三者良好的折衷关系。
