| 1. | Liquid selaed drum gas flowmeter
液封转筒式气体流量计 |
| 2. | Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices
液封直拉法砷化镓单晶及切割片 |
| 3. | Liquid this seal water gauge adopts integral to design mechanical intensity high , have waterproof antimagnetic running steady and reliable
该液封水表采用整体式设计机械强度高，具有防水、防磁、运行稳定可靠。 |
| 4. | Water gauge this at present domestic to can seal liquid water gauge technology with have source read technology perfect product that combine direct while being only
该水表是目前国内唯一能将液封水表技术与无源直读技术完美结合的产品。 |
| 5. | The automatic reading system technology of hydrosealed direct reading water meter of cixi zhangqi flow instrument factory has developed and experienced several reforms
慈溪市掌起流量仪表厂液封直读方式水表自动抄表系统技术发展至今经历了几次技术革命。 |
| 6. | Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits , and it has become one of major materials in information industry
液封直拉法生产的半绝缘砷化镓单晶( lecsi - gaas )被广泛用于微波器件和高频集成电路的衬底材料，成为当代信息产业的重要材料之一。 |
| 7. | In this paper , the author demonstrated the basic principle , development history and characters of high - press liquid - enveloped czochralski method ( leg ) , and its application in producing the gap semi - conductors , at the same time of introducing the general situation of them
本文论述了高压液封直拉法的基本原理、发展历史、特点，该法在半导体材料行业的应用及应用中的影响因素，化合物半导体材料磷化镓的概况、高压液封直拉法在制备该材料时的应用。 |
| 8. | The liquid encapsulated czochralski technique for growing gaas is receiveing considerable attention because it is capable of producing , at reasonable cost , large diameter semi - insulating gaas has a use in the production of gaas integrated circuits , and for this application it must have uniform properties over the whole area of a wafer cut from a grown crystal
目前，液封直拉技术生长gaas单晶获得了广泛关注，因为它能够以合理的成本生产大直径的半绝缘单晶。半绝缘材料是生产集成电路等微电子器件的良好材料，而这种应用就要求整个晶片具有很高的均匀性。 |
| 9. | Especially , mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively . therefore , it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半绝缘gaas为衬底的金属半导体场效应晶体管( mesfet )器件是超大规模集成电路和单片微波集成电路广泛采用的器件结构，因此研究lec法生长si - gaas ( lecsi - gaas )衬底材料特性对mesfet器件性能的影响，对gaas集成电路和相关器件的设计及制造是非常必要的。 |
| 10. | By means of chemical etching , microscope observation , eelectron probe x - ray micro - analyzer ( epma ) , the micro - distribution of c acceptor defect in lec si - gaas wafer is investigated , the results show that there is serious influence of the density and distribution of dislocations on the distribution of c impurity in wafer
本文通过ab腐蚀、 koh腐蚀，金相显微镜观察，透射电镜能谱分析，电子探针x射线微区分析，研究了液封直拉法生长的非掺半绝缘砷化镓( lec ， si - gaas )单晶中碳的微区分布。 |
