| 1. | The kilowatt - class laser output have been realized using yb : yag crystal component by diode - pumped
采用中频感应加热提拉法生长yb : yag晶体。 |
| 2. | The inorganic film is formed on stainless steel plate through dipping - draught method , and under the dropping rate 10cm / min
以浸渍提拉法在不锈钢基板表面施涂膜层，提拉速度10cm min 。 |
| 3. | The sca film is formed on stainless steel plate through dipping - draught method , and drying in 80 c in an hour
以浸渍提拉法在不锈钢表面施涂膜层，在80下烘干一小时，制得掺银有机硅烷抗菌不锈钢。 |
| 4. | In this paper , the series of in : linbo _ ( 3 ) crystals were grown by the czochralski method and then the crystals were polarized and processed
本文用提拉法生长出一系列掺铟铌酸锂( in ： linbo _ 3 )晶体，并对晶体进行极化和加工处理。 |
| 5. | Then the gel film can be prepared by dip - coating or spin - coating technique on the surface of glass and followed by drying in the ethanol vapor
使用浸渍提拉法或旋转涂敷法,并通过放在乙醇蒸汽中干燥,可在玻璃表面得到均匀的凝胶膜。 |
| 6. | Alumina sols of different content were prepared by using al ( o - sec - bu ) 3 as precusor , water as solvent and nitric acid as peptizer
以异丁醇铝为前驱物、水为溶剂、硝酸为胶溶剂制备了不同浓度的氧化铝溶胶，进而采用提拉法和旋覆法制备了致密氧化铝膜。 |
| 7. | The thickness of the film increases with the growth of voltage when deposited for certain time and increases with the enhancement of deposition time when deposited at certain voltage
膜厚随沉积电压和沉积时间的增加而增加，但增加速率下降。同时研究了提拉法镀膜中工艺参数对制备氧化铝膜的影响。 |
| 8. | Based on the infrared anomalous dispersion of compact alumina film , the character of alumina sols and the processing for fabricating compact alumina film were studied by using sol - gel method , combining dip - dropping , spin - coating method and electrophoretic deposition techniques
本文基于致密氧化铝膜的红外反常色散特性，结合溶胶-凝胶技术，采用浸渍提拉法、旋覆法和电泳沉积工艺，对氧化铝溶胶的性质和致密氧化铝膜的制备工艺进行了研究。 |
| 9. | The general analysis of dip - dropping , spin - coating method and electrophoretic deposition techniques shows that the compaction degree of alumina film fabricated by the former two methods are higher than those prepared by the last one . besides , spin - coating method is the most efficient and fast way to raise film thickness
综合分析提拉法、旋覆法和电泳沉积工艺，采用前两种工艺制备的氧化铝膜的致密性优于末者，并且三者中旋覆法最能快捷有效地提高膜厚。 |
| 10. | The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4 , which makes the procedure more convenient and the sedimentation more compact . based on the syntheses of the raw materials , the czochralski method was used to grow the crystal from different charges . by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition , the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing , but is related to the impurity of the charges
采用多种方法合成了用于晶体生长的yvo _ 4原料，改进了液相合成法中获得yvo _ 4沉淀的方法，使得该方法更为简便，获得的沉淀更加致密；在原料合成的基础上，采用提拉法对来源不同的生长原料进行了生长，并通过对在相同气氛下生长的晶体的紫外透过谱线的对比，指出了该吸收峰的存在与晶体生长方向及有无退火无关，进而提出该吸收峰的存在与合成原料中有无杂质有关。 |
