| 1. | Iegt a new power electronic component suitable for statcom
的新型大功率开关器件 |
| 2. | It will have a prominent status in the family of power devices
在功率开关器件这个大家庭里， igbt的地位将更加显赫。 |
| 3. | High - frequency switching power source implemented by pwr - top 3 - end high - tension switch devices
三端高压开关器件实现的高频开关电源 |
| 4. | The dsp is controller , imbh60 - 100 igbt is power switch device and exb840 is driver
该试验装置以dsp为控制器， imbh60 - 100igbt为功率开关器件， exb840为驱动模块。 |
| 5. | Ti ? the resistance measured across the channel drain and source ( or input and output ) of a bus - switch device
测量总线开关器件指定通道的源漏极间(或输入和输出)所得到的阻抗。 |
| 6. | The restricted factor , hard switching of power semiconductor , has been introduced in the chapter two
本文第二章介绍了制约逆变电源高频化的主要因素?电力开关器件的硬开关工作状态。 |
| 7. | With the development of power electronics technology , many kinds of large power capacity switching components are widely used
随着电力电子技术的飞速发展，各种大功率开关器件得到了广泛应用。 |
| 8. | Low - voltage switchgear and controlgear - part 6 - 2 : multiple function equipment ; control and protective switching devices or equipment
低压开关设备和控制设备.第6 - 2部分:多功能设备.控制和保护开关器件 |
| 9. | The voltage peak and switching loss during switching of inverter is the main cause that due to the damage of igbt
逆变桥电路开关过程中出现的电压尖峰和大的开关损耗是导致主开关器件igbt损坏的主要原因之一。 |
| 10. | The photoinduced changes in polarity and molecular structure have led to widespread application of azobenzene derivatives as reversible molecular switch devices
光致极性和分子结构的变化使偶氮衍生物作为可逆的分子开关器件得以普遍应用。 |
