| 1. | Oxidation - induced stacking faults in cz silicon
直拉硅中氧化诱生层错研究进展 |
| 2. | Concentration of stacking faults
堆垛层错密度 |
| 3. | Calculation of electron structure and stacking fault energy of the strengthening phase ni3al
基超合金强化相的电子结构和层错能的计算 |
| 4. | Crystal defect - parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit ' s electrical performance
晶体缺陷-部分晶体包含的、会影响电路性能的空隙和层错。 |
| 5. | Crystal defect - parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit ' s electrical performance
晶体缺陷-部的含包体晶分、会影响电路性能的空隙和层错。 |
| 6. | The simulation results show the obvious effect of " stratified and staggered impinging stream type multiple - nozzle secondary air " on eliminating soot
在理论上证明了煤无烟燃烧锅炉“多孔分层错列撞击流”式二次风在消除碳黑方面具有明显的效果。 |
| 7. | Tem showed that the faults and dislocation loops introduced by the oxygen precipitation were formed when the wafers were annealed at moderate temperature , and polyhedral oxygen precipitation was generated at high temperature
对氧沉淀形态及诱生缺陷进行了tem测试分析，结果表明，在中温退火时出现氧沉淀引起的层错和位错环；在高温退火后生成了多面体形状的氧沉淀。 |
| 8. | Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon . since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates , the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing . moreover , as for the technique to generate dz by rtp in lightly boron - doping samples , it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature , followed annealing and ambient of rtf as well
结果显示，对于普通轻掺硅片能形成明显的很宽的洁净区的rtp预处理工艺，应用于重掺硼样品时没有洁净区形成，所以rtp预处理获得洁净区的工艺不适用于重掺硼硅片，硼的大量掺杂对氧沉淀促进效果大于高浓度的空位对氧沉淀的洲排浙江大学硕士学位论文李春龙：直拉重掺硼硅单晶中氧沉淀的研究促进效果；大量空位的引入，有利于释放氧沉淀生长过程的内应力，适当增加重掺硼样品氧沉淀密度，减少其尺寸，并伴有层错生成。 |
| 9. | Many factors which affect the epitaxy qualities , especially the porosity of porous silicon and growth temperature , have been studied in detail . it is found that the pre - oxidation of porous silicon can efficiently prevent the boron diffusion during epitaxy . the defaults along { 111 } are the main defects in epitaxial silicon layer
深入研究了影响外延的各种因素，特别是多孔硅的孔隙率和外延温度对外延层质量的影响，发现多孔硅的预氧化可以有效地阻止外延时b的扩散，外延层中主要的缺陷是沿着{ 111 }面生长的层错。 |
