| 1. | Research of the buried layer van der pauw and bar resistor
范德堡和条状结构埋层电阻的测试及研究 |
| 2. | Buried oxide layer ( box ) - the layer that insulates between the two wafers
氧化埋层( box ) -在两个晶圆片间的绝缘层。 |
| 3. | Buried oxide layer ( box ) - the layer that insulates between the two wafers
氧化埋层( box ) -在两的间片圆晶个绝缘层。 |
| 4. | Buried layer - a path of low resistance for a current moving in a device . many of these dopants are antimony and arsenic
埋层-为流流电路电了动而形成的低电阻路径，搀杂剂是锑和砷。 |
| 5. | Buried layer - a path of low resistance for a current moving in a device . many of these dopants are antimony and arsenic
埋层-为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。 |
| 6. | A thin epitaxial layer ( 10gm ) ldmos device used n - burry layer structure was proposed in the paper during the high - voltage device design , which is helpful to improve the drive circu it ? technology
在高压器件研究中，提出了一种外延层厚度为10 m采用n埋层结构薄外延高压ldmos器件，对进一步改进驱动电路的工艺有着积极的意义。 |
| 7. | Considering the shortcoming of thick epitaxial layer technology , author proposed a thin epitaxial layer ldmos used n - burry layer . through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage
针对目前厚外延工艺的缺点，提出的薄外延ldmos采用n埋层，通过优化n埋层长度、注入剂量可提高器件耐压。 |
| 8. | The substrate temperature during the plasma implantation has influence both on the quality of the si over - layer and the thickness of the box layer . the latter effect is probably caused by the deviated position of the hydrogen concentration peak in the as - implanted sam
另外，形成的soi结构埋层厚度也随基底温度变化而不同，这可能是氢扩散随温度变化造成浓度区位置不同从而对氧沉淀作用也不同所致。 |
| 9. | Rate of leachate effluent recovery through reverse - osmosis membrane is about 75 % ~ 80 % , withholding almost all kinds of pollutions in leachate , the concentrated leachate which produces in the treatment is recirculated to the landfill , it is helpful to degradation of landfill
通过反渗透膜的垃圾渗滤液出水回收率占其体积的75 % ~ 80 % ，截留了垃圾渗滤液中几乎全部的污染物质，产生的浓缩液回灌到垃圾填埋层，有利于垃圾的降解。 |
