English translation for "化学气相淀积"
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- chemical vapor ceposition
chemical vapor deposition
chemical vapour ceposition
cvd
Related Translations:
淀酌: o onificationo onizationopsonificationopsonization 电泳淀积: electrophoretic deposition 淀积作用: illuviateilluviation 沈淀硬化: precipitation hardening
- Example Sentences:
| 1. | The higher value is comparable to those obtained in cvd epitaxy .
这个高的数值可以和从化学气相淀积外延得到的数值相比拟。 | | 2. | Particulates can emanate from process equipment (e.g., in cvd and etch reactors)as well as from humans (from street clothes, skin flakes, etc. )
尘粒也能由工艺设备（如化学气相淀积和刻蚀反应器）以及工作人员（身穿的外套，体表的皮屑等）而产生。 | | 3. | In contrast to the cvd process, mbe does not require the extensive safety precautions, although solid arsenic dopant must be handled carefully .
和化学气相淀积工艺相反，虽然在操作中对于固体砷还是必须非常小心掌握，但是，分子束外延不需要庞大的安定保险装置。 | | 4. | Generic specification of low pressure chemical vapor deposition system
低压化学气相淀积设备通用技术条件 | | 5. | Chemical vapour deposition
和化学气相淀积 | | 6. | 4 . investigation are made into preparations of thin gate - oxides for strained si channel mosfet ’ s using pecvd at 300 and low - temperature ( 700 ? 800 ) thermal oxidation , respectively
4 .分别对300 c下采用等离子体增强化学气相淀积( pecvd )和700 ~ 800 c下采用热氧化技术制备sigehmos器件栅介质薄膜进行了研究。 | | 7. | In this paper , the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process . the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed . the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ) , x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底，采用常压化学气相淀积( apcvd )方法在其上异质外延生长sic薄膜的技术，分析了cvd法生长sic的物理化学过程，通过实验提出sic薄膜生长的工艺条件，并通过x射线衍射( xrd ) 、 x射线光电子能谱( xps ) 、光致发光谱( pl谱)和扫描电镜( sem )对外延薄膜的结构性质进行分析。 | | 8. | So we applied low temperature techniques to manufacture the sense film of qcm sensors . at low temperature and low pressure , with n - butylamine as the carbon source material , and with dry hydrogen as the carrying gas , we applied r . f . glow discharge plasma to preparation the working film for the qcm sensors
在“实验与分析”一章中较为详细地阐述了采用等离子体化学气相淀积的方法，以正丁胺作为碳源物质，通过射频辉光放电在低温低压条件下制得了正丁胺等离子体淀积膜。 | | 9. | Sige simox ; 3 . sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen . sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ) , gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies
Sige薄膜生长方面：在熟悉各种薄膜外延技术的基础上，采用了近年来发展较为成熟的固态源分子束外延( ssmbe ) 、气-固态源分子束外延( gsmbe ) 、超高真空化学气相淀积( uhvcvd )三种sige薄膜外延技术，在硅( 100 )衬底上外延生长了sige薄膜。 |
- Similar Words：
- "化学气相沉淀" English translation, "化学气相沉积" English translation, "化学气相沉积法" English translation, "化学气相沉积法设备" English translation, "化学气相沉积金刚石" English translation, "化学气相淀积法" English translation, "化学气相淀积工艺" English translation, "化学气象" English translation, "化学汽相沉积" English translation, "化学汽相沉积法" English translation
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