| 1. | The reason is that their valence band is full of electrons , which obstructs current flow
因为它们的价带填满了电子，使电流无法流动。 |
| 2. | In the band structure , one band that is completely filled with electrons is termed valence band
在能带结构中，完全填满电子的带被称为价带。 |
| 3. | Effective masses at the top of valence band and at the bottom of conduction band are deduced from the band structure
价带顶和导带底的有效质量从计算得到的能带结构中求出。 |
| 4. | The highest - energy band containing electrons is called the valence band , and the next higher one is the conduction band
填有电子而能量最高的能带称为价带，相邻的更高能带称为导带。 |
| 5. | Meanwhile , the er 4f spectrum measured upon annealing exhibits well - resolved fine structure , implying that only mono - species of er silicide may exist on the surface
同时观察到了清晰的铒4f价带谱，这暗示着只有一种铒硅化物在表面形成。 |
| 6. | An atomic smictufal model for c ( 2x2 ) reconstruction is proposed and a total energy calculation illustrates that the hollow - site - occupied si adatom model might be a possible atomic structure of the c ( 2x2 ) reconstruction
光电子发射谱被用于研究界面形成过程中出zp 、 hf4f芯能级谱和价带谱，以及功函数等的变化。 |
| 7. | The pinning of the surface fermi level at 0 . 29 ev above its initial value , equivalent to a variation of schottky baxrier height of 0 . 67 ev is observed upon deposition of ~ 0 . 6 ml er onto the clean p - type si ( 00l ) ( 2xl ) surface at room temperature
通过对测得的硅和铒的芯能级和价带的分析，得到了以下结论：随着铒覆盖度的增加至约为0 6单层，表面fermi能级被钉扎在其初始值0 |
| 8. | Some results are interesting , for example , in our calculation , there are no reconstruction in the cleaned pbte > pbse > pbs ( 001 ) surface . but there are different rumple occurs . unlike the iii - v and ii - vi semiconductors , there are no surface states in the fundamental gaps
在表面电子结构特征方面，与111一v族和n一vl族化合物不同，基本带隙中不引入表面态，而在导带顶和价带底附近以及更深能级中出现表面态或表面共振态等。 |
| 9. | As a result , the fermi level at the surface will shift towards the valence band maximum ( vbm ) . accordingly the band bending increases , and the surface depletion layer thickness enhances , therefore , the channel thickness reduces . this is the main factor resulting in the decrease of saturated drain - source current
表面费米能级向价带顶移动，能带弯曲加剧，肖特基势垒高度增加，表面耗尽层变厚，导电沟道变窄，是导致源漏饱和电流下降的主要因素。 |
| 10. | The zno particles are excited by ultraviolet ( uv ) exciting light ( 365 nm ) , showing two photoluminescence ( pl ) peaks / bands , centered at 2 . 90 ev ( blue ) and 2 . 23 ~ 2 . 41 ev ( yellow - green ) , respectively . the intensity of the yellow - green band was reduced after the product had been annealed in n2 and o2 at 350 c for 1h . ultraviolet visible absorption spectrum shows that the zno absorbs ultraviolet light intensely
对于复合h ps zno结构的发光机制，认为是纳米h价带中的电子在紫外光的激发下，跃迁到zno的导带，从而处于激发态，由于多孔硅的导带比氧化锌的导带低， zno导带中处于激发态的电子很快跃窜到多孔硅的导带，然后再与h价带中的空穴发生复合，发出可见光。 |
