| 1. | Xps study shows the mechanism that ohmic properties of the contacts become worse is commutative difiusion between aluminum and silicon in 6h - sic
Xps谱表明，该欧姆接触在400以上的退化的主要机制为al及sic中si的互扩散导致了金?半接触界面层的增厚。 |
| 2. | Auger e1ectron spectroscopic measurements indicate that the intermixing between the deposited er and the substrate si atoms ieads to the formation of ersi , with the outermost surface terminated by si atoms
Auger电子能谱（ aes ）测量结果表明，由于互扩散机制的作用，退火中反应形成的饵硅化物的最外层原子是硅原子。 |
| 3. | It shows that with increasing the bonding temperature and the holding time , a denser and more homogeneous microstructure consisting of less amount of pores are obtained , thereby leading to an increase in the tensile strength . an increase in
通过断口分析,认为w与cu合金的tlp连接实质是:与母材cu连接是cu 、 mn互扩散而形成的tlp连接;与母材w连接是cu - mn合金润湿w的钎焊连接。 |
| 4. | In order to suppress the formation of silicide interfacial layer , a zro2 thin film was deposited as a barrier layer between hfo2 and si . the samples with barrier layer exhibited better leakage and c - v character than the directly deposited ones
作为阻挡层抑制hf和a的互扩散反应，减小了界面层厚度，并提高了界面层的氧化效率，与无阻档层的样品相比电学性能得到了显著的提高。 |
| 5. | Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis . we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics
硅化物主要是由沉积过微溯博士裕文搏要程中hf和出的互扩散引起的，而热氧化可以将其转化成具有较高介电常数的硅氧化物hfxsiyo 。 |
| 6. | For the preparation of coated conductors , one of the most important issues is the growth of seed layer ( the first buffer layer ) , which provide a continuous , smooth , and chemically inert surface for the growth of the ybco film while transferring the biaxial texture from the substrate to the htsc layer
在二代涂层导体中,第一层过渡层(也称为种子层)起着顺延织构和阻挡基带与超导层之间互扩散的重要作用,因此,种子层是涂层导体制备的关键。 |
| 7. | In the interface an interdiffused layer with multphases would be formed during the process of welding or operation at elevated temperature . because of so much difference between the interdiffused layer and the original interface layer , it would influence the welding strength severely
在焊接过程中以及经过较高使用温度的长时间使用后，铌合金同不锈钢界面会产生材料组分元素的互扩散，形成互扩散层，互扩散层的性能与原始界面的性能有较大差别，影响焊接强度。 |
| 8. | In the interdiffused layer the diffused length of nb - 1zr alloy elements is longer than that of stainless steel elements , the diffused length of ni is the longest . there are a mass of needle shape precipitated phases in the interdiffused layers formed by 1300 annealing , which are determined to be a metastable cph - ( nb , ni ) by sadp method
通过对真空退火形成的互扩散层的金相和成分分布分析可以发现，不锈钢元素中ni元素在nb合金中的扩散速度最快， fe 、 cr元素次之；而nb元素向不锈钢中的扩散距离要比不锈钢元素向nb合金中的扩散要深得多。 |
| 9. | It was found that the interfacial bonding of 93w - ofc was both the joining action of ofc / w grains and that of ofc / ni - fe binders , whereas the joining of ofc to tc4 could be seen as the mutual intense diffusion effect between ofc / tc4 and as a result cu - ti intermetallic compounds were formed at the joint . the joining of tc4 - a1 and a1 - mb2 were also attributed to the result of diffusion between elements ti - al and al - mg respectively . on the other hand , residual thermal stress and stress - induced distortion were produced at the joint simultaneously due to the difference in thermal expansion coefficient of different welding " materials
研究表明， 93w与ofc的界面连接是ofc与93w中w晶粒的连接以及ofc与93w中ni - fe粘接剂的连接共同作用的结果； ofc与tc _ 4连接界面的形成是由于ofc与tc _ 4之间发生反应扩散，并由此在二者接头处生成了cu - ti金属间化合物的中间相； tc _ 4 - al的连接与al - mb _ 2的连接则分别是其基体元素ti 、 al之间和al 、 mg之间元素互扩散的结果，另外，由于热膨胀系数的差异，扩散焊接后在不同焊件的接头处存在残余热应力并由此引起接头的形变。 |
| 10. | Therefore , in order to understand the long - time performance of the weld , it is necessary to study the welding interface of niobium alloy and stainless steel , and know the microstructure evaluation . explosive welding and vacuum electron beam self - material brazing were used to prepare the specimen
因此，研究铌合金与不锈钢的焊接结合层，分析形成的互扩散层的组织、成分和性能变化，对了解不锈钢和nb合金的互扩散反应行为，焊接件的焊接工艺改进和长期使用性能的评估是很有意义的。 |
