| 1. | Positron lifetime study of defects in undoped si - inp
中缺陷的正电子寿命研究 |
| 2. | Preparation of semi - insulating material by annealing undoped inp
高温退火非掺杂磷化铟制备半绝缘材料 |
| 3. | Investigation of residual donor defects in undoped and fe - doped lec inp
非掺及掺铁磷化铟中的残留施主缺陷 |
| 4. | Growth and characterization of undoped polycrystalline zno films
热蒸发分解法制备多晶氧化锌薄膜以及性能分析 |
| 5. | Calculations of thermodynamic properties for undoped and sr - doped lamno 3 perovskite oxides
3钙钛矿氧化物热力学计算 |
| 6. | Study of compensation defects in undoped semi - insulating inp by positron lifetime spectroscopy
中补偿缺陷正电子寿命谱的研究 |
| 7. | Test method for deep level el2 concentration of undoped semi - insulating monocrystal gallium arsenide by measurement infrared absorption method
非掺杂半绝缘砷化镓单晶深能级el2浓度红外吸收测试方法 |
| 8. | In addition , it is generally accepted that the compensation of carbon acceptor by el2 donors is a main factor , which determines the semi - insulation property of undoped lec si - gaas single crystal
另外，目前普遍认为非掺si - gaas单晶的半绝缘特性是浅受主碳和深施主el2相互补偿的结果。 |
| 9. | In the third ductility region , the reduction in area of the sn - undoped steel is larger than that of the sn - doped steel . this means that the hot ductility of the sn - undoped steel is better than that of the sn - doped steel
在第类脆性温度区内，不含sn钢的断面收缩率大于含sn钢的断面收缩率，即不含sn钢的热塑性要比含sn钢的热塑性好。 |
| 10. | The temperature at which the ra % is 60 % is about ~ 850 for the sn - undoped steel and ~ 910 for the sn - doped steel . the width of the ductility region of the sn - doped steel is obviously larger than that of the sn - undoped steel
不含sn钢的塑性凹槽上限大约为850 ，含sn钢的塑性凹槽上限大约为910 ，含sn钢的塑性凹槽上限明显大于不含sn钢。 |
