| 1. | Hh silc is found to have a more pronounced transient effect
热空穴应力导致的漏电流具有更加显著的瞬态特性。 |
| 2. | The results show that hh silc is attributed to oxide hole detrapping and the annihilation of positive charge - assisted tunneling centers
研究结果表明：热空穴silc机制是由于氧化层空穴的退陷阱效应和正电荷辅助遂穿中心的湮灭。 |
| 3. | Secondly , the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation
其次，本文分别研究了fn隧穿应力和热空穴( hh )应力导致的超薄栅氧化层漏电流瞬态特性。 |
| 4. | Under both stress conditions , stress induced leakage current follows a power law against stress time with different power factors . for hh silc , the exponential factor significantly deviates from - 1
在这两种应力条件下，应力导致的漏电流( silc )与时间的关系均服从幂函数关系，但是二者的幂指数不同。 |
| 5. | Our highly interactive teaching methods are unique to silc and ensure that students are not only taught the building blocks ( vocabulary and grammar ) of mandarin or english but that they also use the language in a wide variety of contexts and situations
我们高度互动的教学方式不仅能够保证学生词汇和语法的精进，而且使他们学会在不同的上下文中和情况下运用所学语言。 |
| 6. | With the research on hfoxny gate dielectrics , it can reduces leakage current and increase crystallizing point ; our research can help to realize the leakage current mechanism and silc effect of hfo2 , futher more it can offer us direction on optimize the fabrication process
结果表明，与hfo :相比，氮化的hfo :具有小的漏电流。我们的研究结果有助于进一步了解hro :栅介质的泄漏电流机制和silc效应的特征，为进一步优化hfo :高k栅介质的制备工艺提供指导。 |
| 7. | We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
研究表明，在优化工艺条件下制备的hfo _ 2介质层中，衬底注入条件下由于其较低的体和界面缺陷密度，漏电流的输运机制主要以schottky发射为主; silc效应导致hfoz / si界面缺陷态的增加，从而使得衬底注入条件下，栅泄漏电流机制不仅有schottky发射还有f一p发射机制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )栅介质的电学特征。 |
| 8. | The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2 . we studied different surface progress . comparable with conventional method , the surface with nh4f cleaning step have superior thermal stability with hfo2 , nh4f cleaning step is introduced can reduces leakage current and eot ; 3
栅泄漏电流的减小可归于氧空位缺陷的减小，即高的溅射氧气氛和氧气氛退火有助于减小hfo _ 2栅介质中的氧空位缺陷； 4 )研究了反应溅射制备的hfo _ 2栅介质漏电流机制及其silc效应。 |
