| 1. | Fabrication of hydrogenated microcrystalline silicon thin films at low temperature by vhf - pecvd
法氢化微晶硅薄膜的低温制备 |
| 2. | The thin film material was prepared in a multi - chamber pecvd deposition system
最后我们在柔性衬底上制备出了理想的薄膜材料。 |
| 3. | In this experiment , we prepare hydrogenation by pecvd after deposition of silicon nitride thin film for gate insulator of tft
本实验在沉积栅氧化层后立即用pecvd进行多晶硅的氢化处理。 |
| 4. | The motive of this paper is to investigate the relationship between hydrogenation parameters and its properties in order to prepare excellent tft
本文的工作宗旨在研究探索pecvd方法中氢化参数对氢化效果的影响,制备出性能优良的tft 。 |
| 5. | In this way , parameters are prone to control , and hydrogenation ion will not escape without high temperature . in the process of hydrogenation by pecvd
并且在后面工艺中没有高温工艺,这样就使得氢化后进入多晶硅的氢不会因为高温而逸出。 |
| 6. | In order to prepare the zno quantum dot embedded in sio2 host film , we firstly prepared sio2 thin film , and analysed the effect of ratio of gas flux on its optical quality
为了获得sio _ 2基质中包埋的氧化锌量子点，首先用pecvd方法制备了sio _ 2薄膜。 |
| 7. | In this paper , a - si window layers doped with b2h6 or b ( ch3 ) 3 and osi window layers doped with b2h6 were prepared in a series seven - chamber rf - pecvd system
实验研究了工艺参数对材料性能的影响，并且考察了这几种窗口材料在硅薄膜太阳电池上的适用性。 |
| 8. | The theory and structure of pecvd system are introduced , sio _ 2 films with different parameters are deposited on si substrates
阐述了用pecvd技术制备硅基sio _ 2光波导薄膜材料的基本原理、设备结构和实验的基本工艺流程,采用不同的实验参数进行了薄膜沉积。 |
| 9. | As a result , a serial of intense pl bands were observed in the visible and uv range in o and n doped thin films , the related pl mechanisms were discussed
在pecvd法制备的a - sihxoy薄膜中观察到300 - 570nm强荧光辐射带，并发现其中心位置随着氧含量的增加而红移。 |
| 10. | In this study , high quality p - sic film is grown on si ( 100 ) by pecvd method at the substrate temperature of 400 ? 00 ?
在本研究工作中，采用等离子体辅助化学气相沉积( pecvd )法，在单晶si ( 100 )衬底上，在衬底温度为400 - 700的低温下，得到了高质量的- sic薄膜。 |
