| 1. | 3 . the nitridation programs also affect the surface morphology of gan nanowires 氮化程序也会影响一维gan纳米结构的形貌。 |
| 2. | Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma 等离子体对硅表面的低温大面积氮化 |
| 3. | Phase transformations in process of carbothermal reduction nitridation of pyrophylite at different temperatures 高岭土在碳热还原氮化过程中的相变 |
| 4. | ( 2 ) with the aid of in situ monitoring tool , we have investigated the effects of substrate nitridation ( 2 )以在位监测为辅助工具,研究了蓝宝石衬底氮化的影响。 |
| 5. | Progress in synthesis reaction dynamics of ' - sialon by carbothermal reduction and nitridation with natural raw materials 3复合材料的结构性能和优质弥散相的合成热力学 |
| 6. | The effect of oxygen on nitridation of silicon by nitrogen is discussed in the theory of physical chemistry 从理论上详细地分析了二氧化硅氮化与硅片氮化的关系和氧分在氮化过程中对氮化的影响。 |
| 7. | Different nitridation programs have produced straight and smooth gan nanowires and herringbone gan nanowires on quartz substrates , respectively 我们通过改变氮化程序,分别在石英衬底上合成了平直的gan纳米线和鱼骨形gan纳米线。 |
| 8. | In this paper , the condition of direction - nitridation , the kinetics and nitridation mechanism are discussed in experiment and theoretically 本文研究了硅片在热处理条件下的氮化条件和动力学,并从理论上探讨氮化机理,得到了很好的结果。 |
| 9. | The experiment results show that the reduction by carbon and nitridation is connected with the reaction temperature , molding pressure and ratio of tio2 / c of the sample 实验结果表明:制备试样的成型压力、材料本身的tio _ 2 c比、氮化温度对氮化率有一定影响。 |
| 10. | The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment , ic technics and pulling monocrystal in nitrogen 在硅片的热处理、集成电路工艺和氮气保护的拉晶过程中,都涉及到硅的氮化问题,因此硅片氮气直接氮化的研究意义重大。 |