| 1. | Again , because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films , among the experiment , we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500 , and then slowly cooled until the room temperature . via the test and analyse , heat treatment has very important effect on the comeback of crystallattice surface disfigurements . finally , the films were characterized by x - ray diffraction ( xrd ) , scanning electron microscopy ( sem ) , ultraviolet visible ( uv ) and the hall effect measurement 再次,由于离子注入会对薄膜表面的结构造成损伤,本实验把被注入离子的cdte薄膜在n2气氛中500下退火1个小时,然后缓慢冷却至室温。经测试分析,热处理对晶格表面缺陷的恢复有很重要的作用。最后,利用xrd 、 sem 、紫外可见分光光度计及hall测试系统研究其结构,表面形貌和光电性能。 |