Test method for the percentage of burry and impurities in mohair 洗净马海毛含草杂率试验方法
2.
Test method for the percentage of burry and impurities in scouredscoured mohair 洗净马海毛含草杂率试验方法
3.
A thin epitaxial layer ( 10gm ) ldmos device used n - burry layer structure was proposed in the paper during the high - voltage device design , which is helpful to improve the drive circu it ? technology 在高压器件研究中，提出了一种外延层厚度为10 m采用n埋层结构薄外延高压ldmos器件，对进一步改进驱动电路的工艺有着积极的意义。
4.
Considering the shortcoming of thick epitaxial layer technology , author proposed a thin epitaxial layer ldmos used n - burry layer . through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage 针对目前厚外延工艺的缺点，提出的薄外延ldmos采用n埋层，通过优化n埋层长度、注入剂量可提高器件耐压。
