| 1. | Aluminium gallium arsenide , algaas
砷化镓铝 |
| 2. | Effect of high aluminum algaas oxidized layers on vertical - cavity surface - emitting lasers
的激光二极管线列阵光纤耦合器件 |
| 3. | Finally , we got the 940nm ingaas / algaas strained quantum well semiconductor laser
最终获得ingaas / algaas结构的940nm应变量子阱半导体激光器。 |
| 4. | In this thesis , the 940nm high power ingaas / algaas strained quantum well semiconductor laser has been studied
论文对ingaas / algaas高功率940nm应变量子阱半导体激光器进行了研究。 |
| 5. | An experimental approach is given for the measurement of the beam quality factors of an ingaas / algaas sch dqw laser
本文还通过实验测量了ingaas algaasschdqw激光器的光束质量因子m ~ 2 。 |
| 6. | The inherent defects and limitations of the conventional gaas / algaas qwips , which are lead by the structure , were analyzed
分析了常规gaas algaas量子阱红外探测器由于其结构所带来的固有缺点及限制。 |
| 7. | 3 . the principle of the novel gaas / algaas qwips and the strongpoints of the new structure were elucidated in detail
详细叙述了新型gaas algaas量子阱红外探测器的工作原理及这种新型结构所带来的诸多优点。 |
| 8. | We have grown ingaas / algaas strained quantum well laser by mbe . we studied the doped density in the cladding layer
采用分子束外延设备mbe ( molecularbeamepitaxy )对所设计的应变量子阱结构激光器进行晶体生长。 |
| 9. | All is the base work in the aspect of vcsel that a vcsel and a algaas microtip can be integrated and established as a vcsel / snom sensors
这些主要都是为了打好将vcsel与algaas探尖胶合起来，构成vcsel snom复合探针做些在vcsel特性方面的基础研究。 |
| 10. | For the algaas / gaas vcsel fabrication , oxide - confined structure provid electrical and optical confinement . algaas / gaas vcsel fabricated by selective oxidation and selective etching
在vcsel器件研制方面，我们采用氧化物限制结构来对其的电流和光场进行限制。 |
