直接带隙半导体 meaning in English
direct gap semiconductor
direct-gap semiconductor
Examples
- Direct - gap semiconductor
直接带隙半导体 - Zinc oxide ( zno ) is an important wide - band ( 3 . 37ev ) semiconductor with low dielectric constant
Zno是一种重要的宽禁带(常温下为3 . 37ev )低介电常数的直接带隙半导体材料。 - Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x
采用光吸收法测得mn人d n 。 te 。晶体属于直接带隙半导体，其能隙eg随着组分互的增加线性增大。 - In all of the optoelectronic materials , cds was paid more attention for the excellent properties , which has commercial and potential applications in light - emitting diodes , solar cells , and other optoelectronic devices
在众多半导体纳米材料中， cds纳米粒子以其优良的性能引起了许多科学家的极大关注。 cds是典型的-族直接带隙半导体化合物，室温下其禁带宽度为2 . 42ev 。 - Zno is a directed band semiconductor with a big binding energy . it has gained substantial interest because its large exiton binding energy ( 60mev ) , which could lead to lasing action based exiton recombination even above room temperature , such as led , ld and so on
Zno是一种宽禁带的直接带隙半导体材料,具有非常高的激子束缚能( 60mv ) ,即使在室温条件下激子也不会分解,因此可以被用作光发射器件,如led和ld等。