直接带隙 meaning in English
direct band gap
Examples
- Direct - gap semiconductor
直接带隙半导体 - Tin sulfide ( sns ) has an optical band gap of 1 . 3ev , which is close to the optimal band gap 1 . 5ev
Sns的光学直接带隙为1 . 3ev ,接近于太阳能电池材料的最佳禁带宽度1 . 5ev 。 - Zinc oxide ( zno ) is an important wide - band ( 3 . 37ev ) semiconductor with low dielectric constant
Zno是一种重要的宽禁带(常温下为3 . 37ev )低介电常数的直接带隙半导体材料。 - Zinc oxide , zno , a wide direct - gap semiconductor , attracts as much attention as gan in photoelectric research field
Zno ，作为一种直接带隙宽禁带半导体材料，是继gan之后光电研究领域又一热门的研究课题。 - With a broaden and likely direct band gap , porous silicon has a different band structure to that of the bulk silicon . thus the porous silicon can emit at room temperature
多孔硅改变了体硅的能带结构，使禁带展宽，并由间接带隙向直接带隙转变，实现了室温发光。