etching method meaning in English
浸蚀法
刻蚀法
Examples
- The sem and the pl observation showed that the surface of porous silicon prepared by pulsed etching was more uniform and the si particles were smaller . the intensity of pl formed by pulsed etching method was enhanced and the peak had blue shift comparing that formed by dc electrochemical etching method . at the same time , it was observed that the smaller the dimension of the porous silicon , the broader energy gap of the porous silicon
采用脉冲和直流电化学腐蚀两种方法制备多孔硅，对这两种方法制备的多孔硅样品进行扫描电镜和荧光光谱的测量，发现脉冲腐蚀制备的多孔硅样品比直流腐蚀制备的多孔硅样品表面均匀、颗粒尺寸小、发光强度大，而且发光峰位有明显的蓝移现象。 - According to the working principle of thermo - electrode , we demonstrate the structure of enlarged reflection area and the structure of step broaden waveguide to improve the switch ' s performance and bring down the driving power . according to the fabricating condition of our lab , we proposed simple wet - etching method to fabricate the oversized waveguides and peeling - off method to fabricate the electrode
针对全内反射和热电极的作用特点，在全内反射型热光开关的设计中提出了扩大反射区结构和渐变展宽结构，理论模拟和实验结果表明该方法能有效地提高了开关性能，降低了驱动功率。 - The purpose of this thesis is to develop the laser assisted wet chemical etching on the gaas substrate . the main contents and contributions include : 1 ) laser - assisted wet mask - etching method and poles - etching method have been proposed laser - assisted wet mask - etching method is that the area which need not etched is covered by mask film , and the uncovered area is processed by laser induced wet etching
本文的工作就是围绕半导体gaas基片的激光化学诱导液相腐蚀技术开展的,主要的研究结果和创新之处如下: 1 )提出了激光诱导液相抗蚀膜掩蔽法和电极腐蚀法抗蚀膜掩蔽法是指在基片表面不需要腐蚀的区域用抗蚀膜覆盖,激光照射在无抗蚀膜区域,对基片进行腐蚀。 - Theoretical analysis and experimental results show that the mentioned methods above can simplify the process condition , improve the etched effect , shorten the etching time and obtain more even etched surface . 2 ) laser - assisted wet sequencially - selective - etching method has been developed this method can be applied when the corrosion solution is mixed solvent
2 )提出了激光化学诱导液相次序选择腐蚀法该方法适用于腐蚀液为混合溶剂的情况,例如, h2so4 - h2o2对gaas基片进行腐蚀时,先采用h2o2对基片进行氧化腐蚀处理,再利用h2so4进行激光化学腐蚀。 - In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last , use high resolution tem and eds to observe and identify the nature of microdefects
发现几乎所有高位错密度的si - gaas单晶的表层都具有网络状胞状结构或系属结构，首次对该胞状结构和系属结构的形成机制进行了研究；直接观察微缺陷，配合eds (能量色散谱)鉴定si - gaas中微缺陷的物理本质，同时分析其产生原因，讨论与位错的相互作用。