器件模拟 meaning in English
simulation, device
Examples
- The model of semiconductor devices and the equations for the model are analyzed . the boundary conditions and arithmetic analysis of semiconductor device numerical analysis through bipolar transistor are completed
详细阐述了半导体器件数值模拟的模型、模型的基本方程，探讨了器件数值分析特有的边界条件及算法分析，具体说明器件模拟软件须解决的问题。 - Two types of optical devices , planar lightwave circuits ( plcs ) and liquid crystal ( lc ) devices used in optical communications , are considered in this thesis . novel structures , new calculation methods and new design methods are proposed in developing these two type devices
本论文研究了应用于光通信的平面波导光器件与液晶光器件，提出了一些新型的器件结构、器件模拟计算以及设计优化的新方法，解决了平面波导光器件与液晶光器件研制中的若干问题。 - The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software . the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately . the maximum power density of 4h - sic mesfet is as high as 19 . 22w / mm . at the same time , the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed .
论文分析建立了4h - sicmosfet和mesfet器件的结构模型和物理模型，采用二维器件模拟软件medici对4h - sicmosfet和mesfet的输出特性进行了模拟分析，研究了温度和结构参数对器件特性的影响，表明两种器件的击穿特性均没有负阻现象，击穿电压分别达到85v和209v ，由此得到4h - sicmesfet最大功率密度可达到19 . 22w mm ；同时，研究了sic场效应晶体管的制作工艺，初步得到了一套制造sicmosfet器件的制造工艺流程，研制出了4h - sicmosfet器件。 - A tcad tool of doe design of experiment combining with simulations for ic optimization design was implemented on a pc , some simulation software such as suprem , minimos and pspice were utilized . the programs for fitting response surface , extracting spice model parameters and converting data files were completed . the application of doe on ic optimization design was studied using the tcad tool
利用已有的工艺模拟软件suprem器件模拟软件minimos及电路模拟软件pspice ，完成了响应表面拟合spice模型参数提取及数据转换等程序，形成一个可以进行工艺器件及电路分析和优化设计的tcad工具，并用于研究实验设计方法在ic优化设计中的应用。 - And then some terminal techniques on pic , devices simulation theory , resurfs effect and medici software are presented . at last three kinds of high voltage power devices have been designed and simulated . based on the analysis of the breakdown voltage and electric field distribution of the high power devices , the key physics and structural parameters effects on the breakdown voltage are found
本文首先介绍了国内外功率集成电路的发展状况，然后介绍了高压集成电路中的几种终端技术、 resurf效应、器件模拟的基本理论和medici器件模拟软件，最后对三种型号的高压功率器件的击穿特性进行了分析和计算机模拟，指出了影响器件电压的关键的物理和结构参数，并对这三种型号的器件进行模拟，得出的电特性曲线和参数基本上与公司给出的一致。