器件参数 meaning in English
device parameter
Examples
- Firstly we analyze the requirement of sbd of high frequency for the doping concentration and thickness of the epilayer , for the structure parameter of the device . we design the optimum device parameter based on this . 2
首先，从理论上分析出高频肖特基二极管对材料的外延层厚度掺杂浓度的要求，以及其它的器件结构参数要求，以此为依据，设计出最佳的器件参数。 - Measurement of quartz crystal unit parameters by zero phase technique in a pi - network - part 3 : basic method for the measurement of two - terminal parameters of quartz crystal units up to 200 mhz by phase technique in a pi - network with compensation of the parallel capacitance c0
用型网络的零相位技术测量石英晶体器件参数.第3部分:用并联电容co补偿的网络零相位技术测量最高可达200 mhz的石英晶体器件谐振器两端参数的基本方法 - To analyze some key technologies of optical network relative with rwa in detail , such as transmission , switching and internetworking ; to emphasize on the research of function , fabric and performance of optical cross - connection ; to carry out numerical simulations for crosstalk introduced by optical cross connect and to present measurements for suppressing it such as doubly filtering , fixing optimum decision threshold and appropriately choosing the number of multiplexed wavelengths ; 3 . to research the fundamental principle and some problems relative with rwa , including the type of optical network , the type of traffic , the type of service , the survivability of optical network ; to classify and compare rwa algorithms and particularly research some dynamic rwa algorithms ; 4 . to present reserved light - path and classify network resource such as used , unused and reserved status , to emulate establishment of all - optical connection in optical network through modified rwa algorithm and show effectively reducing setup time of all - optical connection utilizing reserved light - path ; to research rwa algorithms of multi - fiber network , to present new link weight functions dependent on node degree , unused fiber ( s ) per wavelength - layer and routing policies , to perform emulation of rwa based wavelength layer graph applying new link weight functions and show them make algorithms better performance and network lower blocking rate ; 5
详细分析了与rwa相关的光网络关键技术，包括传输、交换、组网等，重点研究了光交叉连接的功能和结构、性能，对其引入的串扰进行了详细分析，选择恰当的器件参数进行了数值模拟，并提出了抑制措施(如双重滤波、优化判决门限、选择恰当的复用波长数) ; 3 .研究了光网络的r认叭的基本原理、与r认叭的几个相关问题(光网络类型、业务类型、流量类型、光网络生存性) 、 r认人算法的分类和比较，具体研究了几种动态r场人算法; 4 .研究了以全光连接建立时间为优化目标的r认认算法，提出预置光路的概念，对网络资源进行状态分类(占用、未占用、预置) ，利用改进的r认叭算法仿真，预置光路可为部分新到的连接请求快速建立连接，从而提高网络性能;研究了以多光纤网络连接阻塞率为优化目标的r认城算法，提出了以节点度数、每个波长分层的空闲光纤数以及路由策略决定的几种链路权重函数，利用基于波长分层图模型的并行r场人算法仿真，利用新的链路权重函数使得算法具有更优的性能，使网络具有更低的连接阻塞率。 - Push - pull current mode hfl inverter also is composed of four power switches . the simulation and experiment of a 500va experimental prototype indicates that this circuit has the advantages of less components , simple topology , the ability of four quadrant operation and high efficiency . the inverter does not need the symmetry of the components " parameters and can be applied to dc to ac conversion with single low input voltage source
推挽双向电流源高频链逆变电路也是由四个功率管组成， 500va的原理样机的仿真和实验研究结果表明，该电路元器件少、电路拓扑简单、能够四象限可靠运行、变换效率高，并不要求器件参数的完全对称，适合于输入电压较低的场合。 - The experimental results showed that firstly , the distribution of resistiveity , mobility , carrier concentration , epd and ab - epd in gaas substrate was not uniform ; secondly , the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly , mesfet devices performance correlated with ab microdefects ; last , as shown by pl mapping results , it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices
实验结果表明， lecsi - gaas的电阻率、迁移率、载流子浓度、位错密度和ab微缺陷分布都不是均匀的，且电参数的分布与ab - epd 、位错密度分布有关。制作的mesfet器件的性能参数分布与ab微缺陷有明显联系。从plmapping测量结果可以看出材料的衬底参数好，则pl谱的强度高， pl谱均匀性也好，器件参数也好，就有可能制作出良好的器件与电路。