物理化学过程 meaning in English
physical chemical process
physicochemical process
physiochemical process
Examples
- In production process of waterworks , the quantity of medicament is of most importance because it related to the quality of production water , meanwhile it is also difficult to deal with
在水处理单元环节的自动控制方面，混凝投药是重要的环节，因为这一环节关系到出厂水的水质；同时它又是最困难的环节，因为它涉及的是一个复杂的物理化学过程。 - The physical and chemical processes of nozzle atomization and the evaporation , mixing and combustion of propellant drop flow are very complex . for the reason , the researches on nozzle are still based on the experimental research now in or abroad
由于喷嘴雾化及其喷雾流的蒸发、混和和燃烧是一个非常复杂的物理化学过程，目前国内外对喷嘴的研究仍以模型实验研究为主。 - Radioactive sources are studied in the thesis . such physical and chemical phenomena as radionuclides " generation , release and transference are discussed . in order to adapt them to real time simulation , radionuclides are dealt with briefly
本文分析辐射源项，讨论了涉及放射性核素产生、释放、传递等物理化学过程，并对放射性核素进行了简化处理，以使其适应实时仿真的需要。 - Special attention is paid to the consequences of methanol crossover in cathode reaction and cathode over - potential . good agreement is found between simulations and experiments in regard to the v - i character of dmfcs . based on the theory of parallel electrode reaction , it becomes possible to obtain quantitatively the value of over - potential caused by methanol crossover , which is either implicit or not included in the overall cathode over - potential in previous models
该模型涵盖了dmfc中的主要物理化学过程，包括：甲醇水溶液在膜电极内的扩散、对流和电迁移；质子在阳极催化剂层和阴极催化剂层内的传递；氧气、水蒸汽在阴极的扩散；阳极催化剂层内的甲醇氧化反应动力学；以及阴极催化剂层内的氧还原和甲醇氧化反应动力学。 - In this paper , the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process . the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed . the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ) , x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底，采用常压化学气相淀积( apcvd )方法在其上异质外延生长sic薄膜的技术，分析了cvd法生长sic的物理化学过程，通过实验提出sic薄膜生长的工艺条件，并通过x射线衍射( xrd ) 、 x射线光电子能谱( xps ) 、光致发光谱( pl谱)和扫描电镜( sem )对外延薄膜的结构性质进行分析。