晶格缺陷 meaning in English
crystal defect
crystal lattice defect
crystalline host lattice imperfection
lattice faults
lattice imperfection
Examples
- We measured the samples " electrical properties ( square resistance , square carrier concentration , carrier mobility and hall coefficient ) at room temperature by hall measurement . the experimental results revealed that all the samples are p - type , with increasing the annealing temperature , the carrier mobility increased and the square carrier concentration decreased . these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing
所有样品均为p型导电类型；发现在650到850温度范围内，随着退火温度的升高，样品的方块载流子浓度呈下降趋势，而载流子迁移率呈上升趋势；这是由于在退火过程中，随着退火温度的升高，有更多的mn参与mnas相的形成，使得以替位受主形式存在的mn减少，并且晶格缺陷得到恢复所致。