寄生参数 meaning in English
parasitic parameter
Examples
- These rules are based on the extraction of all parasitic parameters of the layout and device modeling , including transition behavior , high frequency characteristics of the different materials , and electrostatic couplings to printed circuit board ( pcb ) conductors and to the ground
这些规则是基于抽取pcb的敷线和器件模型的所有寄生参数而建立的，寄生参数的抽取考虑到了瞬态行为，不同材料的高频特性， pcb不同导体和各导体对地间的静电耦合。 - With soft - switching technology , inverter spot - welding power source has lower switching dissipation , lower electromagnetic interference and lower sensitivity to parasitic parameters of power circuit , contribute to inverter output characteristics and circuit efficiency , stability and reliability
采用软开关技术的点焊逆变电源，可减小开关损耗、电磁干扰及对电路寄生参数的敏感性，并从根本上改善电路的输出特性，提高电路的效率、稳定性和可靠性。 - The factors limiting the frequency band of the wide - band amplifier are introduced . through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics , a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit , current pattern circuit and frequency characteristics are analyzed . according to the linear theory of transconductance which is applied in the bit circuit , the current pattern amplifier circuit , current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
介绍了限制宽带放大器频带宽度的因素，通过分析mosfet的本征参数、寄生参数对频率特性的影响，提出了采用短沟器件、使mosfet工作在饱和区、抬高栅源电压等提高mosfet特征频率的方法；分析了不同电路组态对放大器频率特性的影响、节点电压对电压模电路、电流模电路频率特性的不同影响，根据应用于双极晶体管电路的跨导线性原理，提出了采用mosfet构成的电流模放大电路、电流传输电路、输出电路以及由它们所组成的宽带放大器，获得了良好的频率响应。 - To make use of parasitic parameter to design the circuit : because parasitic inductance induced by packaging could not only influence the circuit characteristics , but also lead to a design failure , the inductor value needed in the circuit can be designed in the amplifier according to the size of parasitic inductance
4 、利用寄生参数来设计电路。由于电路的封装存在寄生电感,其不仅会影响电路的特性,而且可能造成电路设计工作的失败,所以根据电路所需电感及其值的大小,将之有效的设计在放大器电路中。 - Theoretically several solutions are derived in the final scheme such as broadband matching technology which included negative - feedback technology , traveling wave technology and balance technology . in addition , the design will be optimized by eda software and the final test result indicates that our design is successful . the principle of microwave amplifier is introduced at first in this paper , especially its main parameters index sign , then the material performance and the influence of parasic parameter and model setting of the gaas phemt is discussed
文中首先介绍宽频带放大器的主要参数指标,接着介绍了gaasfet的材料特性,以及phemt管芯寄生参数对实际放大器设计的影响,然后讨论gaasphemt的大、小信号模型的建立与分类;结合gaasphemt模型和s端口参数分析了宽频带匹配技术的原理;最后论述本课题中各个放大器实现的具体方案,以及在放大器实现过程中应该注意的问题,给出了实际宽带放大器的测试结果,并将软件仿真结果与实测曲线进行对比。