Chinese translation for "晶格缺陷"

crystal defect
crystal lattice defect
crystalline host lattice imperfection
lattice faults
lattice imperfection

Related Translations:

晶格参数:  crystal lattice parameterscrystal parameterdimensions of latticeparameter in crystals

基体晶格:  matrix lattice

晶格弯曲:  lattice bending

晶格扩散:  lattice diffusion

复杂晶格:  compound lattice

晶格紊乱:  lattice disorder

晶格放大:  lattice amplification

子晶格:  sublattice

晶格松弛:  lattice relaxation

晶格掺杂:  impurity

Example Sentences:

	1.	The result showed that crystal defect of nano - cuo prepared by pressure - hydrothermal method is less , structure is more stable , the process of charge and discharge is more steady , and duration is longer 结果表明，压力-热液法制备的纳米氧化铜晶格缺陷少，结构稳定，充放电过程平稳，且持续时间长。
	2.	Ecr - pemocvd has an incomparable property that the growth of high quality gan thin film can be controlled in a low range of temperature from 400 c to 600 c . accordingly , the structure defect and thermal mismatch will be reduced Ecr - pemocvd法能够在400 - 600的低温下大面积生长gan薄膜，因此减少了晶格缺陷的产生。
	3.	By studying the luminescence mechanism and the optical spectra , the two reasons for the diminish of light yield are given : the absorption of the fluorescence by the point defects when that produced and the scatter of the fluorescence by the macroscopic defects when that transmitting . in ce : yap scintillators , the available approach to improve the light yield is to diminish the self - absorption of the point defects 通过光谱分析和对发光机制的研究，指出在产生荧光辐射过程时晶体中的点缺陷对荧光的吸收以及荧光收集过程中宏观缺陷对荧光的散射是造成晶体光产额减小的原因，通过减小晶格缺陷是提高晶体光产额的有效途径。
	4.	We also investigated the effect of c on the samples formed by ion implantation of mn and c . we studied the samples " crystal structure and surface appearance by x - ray diffraction and afm , experimental results revealed that with increasing the annealing temperature , the crystal lattice reformed and defect in the surface reduced gradually 还进行了mn ~ + 、 c双离子注入，研究了c对样品性质的影响。利用x -射线衍射法和原子力显微镜对样品的晶体结构和表面形貌进行了研究。发现随着退火温度的升高，样品的晶格质量得以恢复；注入表面形成的晶格缺陷逐渐减少。
	5.	Main research contents and achievements of this thesis is as follows : l . this paper carries through particular test and analysis to the basic physical - chemical properties of gaojiawang palygorskite , an environmental mineral fibre , by xay , ir , tem , sem etc . this paper has also discoursed upon the development appliance research status in quo and directions of palygorskite . 2 . according to the preceding surface modification research achievements to nonmetal mineral materials , the author combines the self characteristics of palygorskite such as the ratio of length and diameter , typical nano - rank particle diameter , big ratio surface area , well - developed crystal growth imperfection and lattice defect etc . the author also designs organising modification ortho - experimentation of palygorskite by adopting iso - propyl alcohol as thinner of wd - 51 and ndz - 401 , and acquires the best craft parameters and craft conditions for gaojiawang palygorskite original ore organising modification , namely : wd - 51 concentration 1 . 6 % ( wt % ) , modification temperature 120 ? , and modification time 60 mins ; ndz - 401 concentration 2 . 0 % ( wt % ) , c modification temperature 120 , modification time 80 mins 在前人对非金属矿物材料表面改性的基础上，结合环境矿物纤维?坡缕石自身的特点(如：长径比、典型的纳米粒径、大比表面积、发育的晶体生长缺陷和晶格缺陷等) ，通过对坡缕石有机化改性设计正交试验，采用( ch _ 3 ) _ 2choh作为稀释剂，获得了采用wd - 51和ndz - 401对高家洼坡缕石原矿进行有机化改性的最佳工艺参数和工艺条件，分别为： wd - 51的浓度为1 . 6 ( wt ) ，改性温度为120 ，改性时间为60min ； ndz - 401的浓度为2 . 0 ( wt ) ，改性温度为120 ，改性时间为80min 。
	6.	We measured the samples " electrical properties ( square resistance , square carrier concentration , carrier mobility and hall coefficient ) at room temperature by hall measurement . the experimental results revealed that all the samples are p - type , with increasing the annealing temperature , the carrier mobility increased and the square carrier concentration decreased . these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing 所有样品均为p型导电类型；发现在650到850温度范围内，随着退火温度的升高，样品的方块载流子浓度呈下降趋势，而载流子迁移率呈上升趋势；这是由于在退火过程中，随着退火温度的升高，有更多的mn参与mnas相的形成，使得以替位受主形式存在的mn减少，并且晶格缺陷得到恢复所致。

Similar Words：

"晶格平移矢量" Chinese translation, "晶格气" Chinese translation, "晶格曲率" Chinese translation, "晶格取向" Chinese translation, "晶格缺位" Chinese translation, "晶格缺陷；格子缺陷" Chinese translation, "晶格缺陷的热恢复" Chinese translation, "晶格缺陷散射" Chinese translation, "晶格缺陷散射 点阵缺陷散射" Chinese translation, "晶格扰动" Chinese translation