Chinese translation for "掺杂型"
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- doping type
Related Translations:
掺杂补偿: doping compensation 选择掺杂: preferential dopingselective doping
- Example Sentences:
| 1. | In this thesis , a comprehensive introduction of electric nanometer - sized powders , especially antimony doped tin oxide was provided , mainly including the development , mechanisms , types and preparation methods
本论文全面的介绍了纳米导电粉体，特别是金属氧化物掺杂型纳米导电粉体的发展概况、原理、种类以及常见的制备工艺。 | | 2. | This article reviews recent progress in research on the preparation , thermal properties and orientation stability of aryl polyimide based second - order nlo materials : host - guest system , maid - chain system , side - chain system and crosslink system , and points out the study direction for future efforts
摘要综述了近年来采用芳香聚酰亚胺为骨架的主客体掺杂型、主链型、侧链型和交联型的二阶非线性光学聚合物材料在合成方法、耐热性和取向稳定性等方面的研究进展情况，并根据目前存在的问题，展望了今后的研究方向。 | | 3. | Abstract : the progress in nanostructured luminescent materials has been reviewed in this paper . emphases are laid on the synthesis and characterization methods of ( rare earth ) doped nanostructured luminescent materials . in the meanwhile , the properties and applications of the nanostructured luminescent materials are introduced , and the future development trends for the nanostructured luminescent materials are forecasted in brief
文摘:本文综述了纳米发光材料的研究进展情况，着重总结了(稀土)掺杂型纳米发光材料的制备方法和表征手段，同时介绍了这些纳米发光材料的性质和应用，并对其未来发展趋势进行了展望。 | | 4. | Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis . a unique method for cleaning and drying of substrate - cleaning used by scour , drying used by infrared light was fished out by large numbers of experiment . chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time . by the measurements of sem , xrd and uvs , the thin film was analysed . the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous , dense and crackfree was the crystalline phase of hexagonal wurtzite . the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm . the average transmittance of thin film in visible region was above 90 % . the results of measurements else also proved that the thickness of single dip - coating was 75 240nm , this films resistivity was found to be 3 . 105 102 3 . 96 105 ? cm . the thickness and resistivity of thin film influenced by dope - content , withdrawal speed , pre - heat - treatment , anealing were reseached respectively
利用xrd 、 sem以及uvs光谱仪等分析方法对薄膜进行了研究，结果显示，所制备的薄膜为六方纤锌矿型结构，具有高c轴择优取向性；表面均匀、致密，薄膜材料由许多星状晶粒组成，晶粒尺寸大约为10 - 30nm左右；薄膜可见光透过率平均可达90 % ；对薄膜厚度以及电学性能进行了测定后发现：单次镀膜厚度约为75 - 240nm ， al ~ ( 3 + )离子掺杂型氧化锌薄膜的电阻率在3 . 015 102 - 3 . 96 103 ? cm范围内；分别研究了掺杂浓度、提拉速度、预烧温度、退火温度等工艺参数对薄膜厚度和电阻率的影响。 | | 5. | On the base of the study on si / sige hetero - junction fast switching power diode , two kinds of novel structure of sige / si pin diode are proposed in abstract this paper . the one is the gradual changing doping concentration in the n - region , and the other is sige pin diode with mesa structure
本文在对sige si异质结快速开关功率二极管的研究基础上，提出了两种sige si快速开关功率二极管的新结构： ?基区渐变掺杂型sige异质结开关功率二极管和台面结构sige异质结开关功率二极管。 | | 6. | The character , history and trends of oleds ( organic light - emitting devices ) were introduced in this paper as well as its relative optical - chemical and physical theories . several samples of different structure - single , double and doped - were designed and fabricated by selecting appropriate materials . after that , several parameters which reprensent device ' s performance were measured
本论文介绍了有机电致发光（有机el ）器件的特点、历史、动态；着重论述了与有机el相关的光物理和化学原理以及有机el器件的原理；设计并制备了单层、双层以及掺杂型有机el器件；对器件的性能参数进行了测试、分析和对比，并对特性曲线的成因进行了理论解释。 | | 7. | It also showed that doping concentration as well as the dopant itself had great influence on device character ; the el spectrum of devices indicated that the emitting sites in the doped devices shifted from alq molecules to the dopant and the current mechanism of the device was also changed when doping in the host
从能带结构来看，掺杂剂的引入相当于在发光层中引入了新的能级结构，这是掺杂后器件性能发生改变的根本原因；适当的掺杂剂和掺杂浓度能够大大提高器件性能（在20v直流电压驱动电压下获得了亮度为25000cd / m2的掺杂型有机el器件） 。 |
- Similar Words：
- "掺杂物 双方损失合计数" Chinese translation, "掺杂物；掺假物" Chinese translation, "掺杂物的" Chinese translation, "掺杂系统" Chinese translation, "掺杂险" Chinese translation, "掺杂掩模" Chinese translation, "掺杂掩模窗口" Chinese translation, "掺杂氧化技术" Chinese translation, "掺杂氧化物扩散" Chinese translation, "掺杂氧扩散" Chinese translation
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