| 1. | The microstructure of single - crystal nb - 18 . 7si ( at . % )
光学悬浮单晶生长技术制备的nb刁7st （ t |
| 2. | The emiting problem of crystal latent heat can be settled during the crystal growth of 200mm solar cell czsi
重点解决了200mm低氧碳太阳能级czsi单晶生长中结晶潜热的散发问题。 |
| 3. | In this paper , part reconstruction is done based on the tdr - 70 crystal furnace , and designing a new 16 " complex heat system for 200mmczsi crystal growth
本文在国产tdr - 70炉的基础上，对原设备进行了局部改造，设计了适合200mmczsi单晶生长的新型16 ”复合式热系统。 |
| 4. | The researching results show that a chemical transport agent introduced into our system can avoid the congruent sublimation condition and help to grow znse crystal under relatively low temperature . this route will reduce the production cost of znse single crystals
两种晶体西北工业大学博士学位论文生长实验证明，输运剂的引入可以降低znse晶体的气相生长温度，避免了znse的气一固一致升华范围过窄对znse单晶生长的限制，从而可以简化工艺，降低成本。 |
| 5. | The foundation to develop nb - si system intermetallics base high temperature structure materials has also been established in some degree in this paper . arc melting , powder metallurgy and optical floating zone technology have been used and compared to fabricate the nb - si system intermetallics
运用电弧熔炼、粉末冶金热压烧结、粉末冶金冷等静压和光学悬浮单晶生长技术等方法制备了nb - si系金属间化合物，并对这四种方法制备的nb - si系金属间化合物进行了比较。 |
| 6. | Abstract : in view of the crystal structure , this paper repo rts thecharacter of single crystal growth of germanate and the properties as me dium of laser crystal . the study and progress in germanate crystals used as widel y tunable laser crystal , self - doubling - frequency crystal and highly efficient and low pumping threshold laser crystal are introduced
文摘:从晶体结构上分析了锗酸盐的单晶生长和作为激光晶体基质的特点，并介绍了锗酸盐作为可调谐激光晶体，自倍频晶体，高转换效率和低泵浦阈值的激光晶体的研究及进展。 |
| 7. | The results indicate that arc melting is a good method to produce nb - si system intermetallics due to its simpler technics , lower cost and compact products . however , powder metallurgy is found to be not suitable to produce the nb - si system intermetallics due to its coarse and loose products resulting from the poor molding property of nb and si mixed powders . optical floating zone technology , which is used to fabricate nb - si intermetallic composites for the first time , is also found to be a good way to produce nb - si system intermetallics because of its compact products and good property despite of its relatively high cost
结果表明，电弧熔炼方法制备得到的nb - si系金属间化合物比较致密，且制备工艺简单，经济实用，是一种合适的nb - si系金属间化合物制备方法；由于nb 、 si元素粉末的成型性很差，用粉末冶金方法(热压烧结和冷等静压)制备的nb - si系金属间化合物表面粗糙、致密度低，且成本较高，不宜用于制备nb - si系金属间化合物；首次用光学悬浮单晶生长技术制备的nb - si系金属间化合物复合材料致密度很高，尽管成本稍高，但由于性能最佳，也是一种合适的nb - si系金属间化合物制备方法。 |
| 8. | The results reveal that the microstructure of the nb - si system intermetallics consists of nb and nbasi phases . because of unstable microstructure of nfysi phase at high temperature , the equilibrium nb + nbssia dual - phase microstructure of the nb - si system intermetallics should be acquired by means of heat - treatment
研究表明，采用电弧熔炼和单晶生长技术制备的nb - si系金属间化合物的显微组织主要由nb + nb _ 3si组成，而由于nb _ 3si相在高温下是不稳定的，为了得到稳定的nb + nb _ 5si _ 3双相组织，必须对材料进行热处理。 |
| 9. | Because of its brilliant application prospects and the difficulties in single crystal growth , the growth technique and properties of znse single crystals have attracted mach attention and have become the most active areas in znse semiconductor research . in this thesis , we present our work on the optical and electronic property characterizations , as well as the growth methods
本文工作重点是探索制备工艺简单、成本低、操作简便的znse单晶生长新方法，获得化学计量比接近1 ： 1的、具高结晶质量的znse体单晶，并在此基础上对生长的znse单晶的结构特点、光学和电学特性进行进一步研究。 |
| 10. | With the development of the growth skill craft of gaas single crystal , the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too , so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material . so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon
随着单晶生长技术的发展，通过退火，由于si - gaas中理论化学配比偏离， el2浓度可被控制在1 1 . 5 10 ~ ( 16 ) cm ~ ( - 3 ) ，且分布均匀。因此碳的分布就成为决定si - gaas材料电阻率均匀性的一个关键因素。所以，研究碳微区均匀性就显得非常重要。 |
