| 1. | Surface passivation process with polyimide
聚酰亚胺表面钝化工艺 |
| 2. | Device processing : etching . surface passivation ; dielectric films
元件制程：蚀刻，表面钝化，介电材料薄膜。 |
| 3. | The surface passivation of gaas is an unsolved problem for a long time
砷化镓的表面钝化是一个长期未能很好解决的问题。 |
| 4. | It is described that the innovatory technology of selective diffusion and study on surface passivation in theory for crystalline silicon solar cell
本文的主要内容是介绍晶体硅太阳电池选择性扩散新工艺和表面钝化的理论研究。 |
| 5. | Key technologies and its mechanism for improving crystalline silicon solar cells in the scale manufacture have been researched in this thesis . after sioa surface passivation and forming gas treatment utilization in the scale manufacture , the surface recombination and series resistance of solar cells have been reduced while their open - circuit voltage , fill factor and efficiency improved
本论文研究了提高晶体硅太阳电池效率规模化生产工艺技术的主要环节和相关机理，将sio _ 2表面钝化、 forminggas处理用于规模化生产，降低了太阳电池的表面复合速度和串联电阻，提高了开路电压、填充因子和转换效率。 |
| 6. | Firstly , the basic principle of solar cell is summarized ; secondly , the study on selective diffusion for crystalline silicon solar cell is introduced , including the explain away structure of selective emitter solar cell and the technological design of selective diffusion ; at last , the research of surface passivation in theory is expounded
首先，简要阐述了太阳电池的基本原理；其次，阐述了晶体硅太阳电池选择性扩散的研究(其中包括选择性发射极太阳电池的结构说明和选择性扩散的工艺设计) ；最后，阐述了表面钝化的理论研究。 |
| 7. | On the base of these theory calculations , we passivated the front - surface both of different surface doping concentration solar cells by a thin layer of thermally grown sio2 . the results show that the in heavy surface doping concentration cell is lower compared to the cell in light surface doping concentration . the majority of improvement in comes from the emitter surface passivation
接着采用sio2作为钝化膜，从实验上比较了在不同表面浓度下单晶硅太阳电池的钝化效果，结果表明在高表面浓度下其开路电压比低表面浓度下的开路电压低，这开路电压的提高主要来源于降低了前表面复合。 |
