| 1. | The proximity effects of spin - splitting in superconducting junctions
超导结中自旋分裂的邻近效应 |
| 2. | A study on superconducting proximity effect and electron energy state distribution
与电子能态分布研究 |
| 3. | The proximity effect of synmmetrical cable employing copper clad steel as conductor
采用铜包钢复合线的对称电缆邻近效应 |
| 4. | It may also be used to compensate for proximity effect or to reduce the low frequencies that can make an instrument sound dull or “ muddy
还可用它来补偿邻近效应，或降低可使乐器声音显得沈闷或“拖泥带水”的低频部分。 |
| 5. | Use this setting with vocals or instruments to compensate for proximity effect or to reduce the low frequencies that can make an instrument sound dull or muddy
可用它来补偿人声或乐器的邻近效应，或降低可使乐器声音显得沈闷或拖泥带水的低频部分。 |
| 6. | Piezoresistivity of ecac may involve proximity effect , microcrack and the staggered arrangements of conductive pass - ways due to shear strength of aggregates
压敏产生的原因是导电沥青混凝土试件的压缩邻近效应、微裂纹和石料间的剪切力使部分导电通路错位。 |
| 7. | As the ic manufacturing process develops from sub - micron to very deep submicron ( vdsm ) technologies , with current lithography tools ( 248nm and 193nm ) , foundries can not manufacture products that designs want because of so - called optical proximity effect ( ope )
当集成电路生产工艺发展到纳米级时，利用现有的曝光设备( 248nm和193nm ) ，由于所谓的光学邻近效应，集成电路制造厂商已经无法制造出满足电路功能要求的产品。 |
| 8. | We form a ly a line sample from spectra of 19 qsos in the literature . in this analysis , we demonstrate that a proximity effect is present in the data ; i . e . , there exists a significant deficit of lines at zabs = zem , within 4h - 1 mpc of the qso emission redshift . and the deficit depends on the rest equivalent width of the lines , with weak lines showing a relatively weaker effect
我们发现所选样本中确实存在接近效应，特别在z _ ( abs ) z _ ( em )附近距类星体4h ~ ( - 1 ) mpc范围内， ly森林的线数相对演化规律估计得到的线数缺少很显著，并且与谱线的静止等值宽度有关，弱线的接近效应较弱。 |
| 9. | Abstract : a new method for determining proximity parameters , , and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians . a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist . furthermore , the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions
文摘:在电子散射能量沉积为双高斯分布的前提下,提出了一种提取电子束光刻中电子散射参数,和的新方法.该方法使用单线条作为测试图形.为了避免测定光刻胶的显影阈值,在实验数据处理中使用归一化方法.此外,用此方法提取的电子散射参数被成功地用于相同实验条件下的电子束临近效应校正 |
| 10. | Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool , reticule , resist exposure , development and etching , they are beneficial to develop a yield - driven layout design tool , the engineers could use it to automate the tasks of advanced mask design , verification and inspection in deep sub - micron semiconductor manufacturing
建立准确描述由于掩模制造工艺、光刻胶曝光、显影、蚀刻所引起的光学邻近效应和畸变所导致的关键尺寸变化的光刻工艺模型，有助于开发由成品率驱动的版图设计工具，自动地实现深亚微米下半导体制造中先进的掩模设计、验证和检查等任务。 |
