Chinese translation for "gate voltage"

场效应晶体管栅压
触发电压
控制极电压
门电压
栅电压
栅压

Related Translations:

gate:  n.1.大门，扉，篱笆门，门扇。2.闸门；城门；洞门；隘口，峡道。3.【冶金】浇注道，浇口，切口；【无线电】门电路，选通电路，选通脉冲，启开脉冲，时间限制电路。4.(运动会、展览会等的)门票收入；观众数；入场费。5.〔英国〕伦敦 Billingsgate, Newgate 等的略称。6.锯架。7.电影放映机镜头窗口。8.〔俚语〕解雇。短语和例子a folding gate折

gates:  n.盖茨〔姓氏〕。

gating:  浇注系统门控选通, 控制选通开启控制入型口异界之门遮没

gated:  网关常驻程序网关守护神选通的,门控的

voltage:  n.【电学】电压，电压量，伏特数。 the working voltage (电气的)耐压限度。

gate ved gate:  玫瑰仙子金曲集相对的城门

gate gated pattern:  带浇口的铸模

Example Sentences:

	1.	In chapter three , we re - solve the set of linear equations in chapter two after applying gate voltages to gate capacitors 第三章在给各门电容加上门电压后重解了第二章中的线性方程组。
	2.	Quasi - static capacitance has been measured , when drain voltage is 0v , and gate voltage changes from ? 5v to 0v , the surface peak 采用应力测试方法,获得了algan / ganhemt漏极电流随时间的变化。
	3.	Slowly - drop gate voltage and softly turn - off principles are explained in this article , specific parameters are also listed 摘要阐述了软降栅压和软关断的过电流保护原理，列出具体的保护时序参数。
	4.	It hints us that , by modulating the gate voltages we can get effective control over charge solitons in a tunnel junction array 这启发我们通过调节门电压可以实现对结链中的电荷孤子进行有效控制。
	5.	An hfo2 layer with less than 3 . 5nm eot was obtained and show good electrical properties . the gate leakage current at a gate voltage bias of iv is less than 10 - 7 a / cm2 研究显示，溅射氛围中增加氧分压和在氧气氛退火有助于减小hfo _ 2栅介质的漏电流。
	6.	We can obtain the trap density by measuring the change of gate voltage of mos capacitance under constant current stress and the change of high frequency c - v curve before and after the stress 该方法根据电荷陷落的动态平衡方程，测量恒流应力下mos电容的栅电压变化曲线和应力前后的高频cn曲线变化求解陷阶密度。
	7.	A particular over - current protection and drive circuit is given , the impact of resistance between gate and emitter on gate voltage dropping is discussed , and an adjustable gate - emitter resistance circuit is put forward 设计了过电流保护驱动电路，讨论了栅射集电阻对降栅压过程的影响，并提出一种可变栅射集电阻电路。
	8.	In this paper , a precise cmos bandgap voltage reference which uses the difference of mos source - gate voltage to perform efficient curvature compensation is described in detail , which is compatible with standard digital cmos process 论文详细描述了一个运用标准数字cmos工艺实现的、采用mos管的栅源电压差进行有效的温度曲率补偿的带隙基准电压源电路的设计。
	9.	The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3 详细地分析了工作温度、栅极电压、漏源电压和磁场对其特性的影响，观测到明显的库仑阻塞效应和单电子隧穿效应，器件的工作温度可达到77k以上。
	10.	The structure of field emission triode is first simulated by magic . the tip height , tip position , tip curvature , gate aperture , and gate voltage are changed , to observe the emission current and the electron congregation 本课题首先采用magic软件对三极管结构的尖锥场发射阴极进行了模拟计算,分别改变尖锥高度,锥尖位置,尖锥曲率半径,栅极孔径及栅极电压,观察阳极收集电流及电子束的会聚情况。

Similar Words：

"gate vane" Chinese translation, "gate vane lever regulator" Chinese translation, "gate ved gate" Chinese translation, "gate vessel" Chinese translation, "gate vibration" Chinese translation, "gate washout" Chinese translation, "gate way" Chinese translation, "gate way express ltd" Chinese translation, "gate wedge" Chinese translation, "gate weir" Chinese translation