| 1. | The transformer isolates the transistors with regard to d-c bias voltage . 变压器可在两个晶体管之间隔离直流偏压。 |
| 2. | The best parameters are : negtive bias voltage 200v ; deposition time 10min Ao对kapton薄膜有较严重的侵蚀作用。 |
| 3. | It ' s was found that the bias voltage and rf power influence the quality of film and prf 溅射时衬底偏压和射频功率可以影响膜的结构,从而影响prf值。 |
| 4. | Process parameters included rf power , substrate negative bias voltage , substrate temperature and working gas pressure 工艺参数有射频功率、衬底负偏压、衬底温度和工作气压等。 |
| 5. | Effects of bias voltage polarity on reliable operation conditions of differential capacitive accelerometer with voltage feedback 偏置电压极性对差分电容微传感器可靠工作条件的影响分析 |
| 6. | At 200v of substrate negative bias voltage and 300w of rf power , the content of cubic phase in bn films reaches 92 . 8 % 当负偏压为200v ,功率为300w时,薄膜中立方相的含量达到92 . 8 。 |
| 7. | Either the substrate temperature or the bias voltage as a parameter of particular interest was rised first and reduced after it 偏压和温度降由较低的值变为较高的值;而后再将为较低的值。 |
| 8. | Cbn forms only if bias voltage exceeds threshold value . threshold value varies with different parameter windows and is 125v in ours 不同的沉积窗口偏压阈值不同,在我们的实验条件下,该阈值为125v 。 |
| 9. | For obtaining cbn thin films , it is necessary that substrate negative bias voltage is not lower than 90v and r . f power is not lower than 200w 若要得到立方氮化硼薄膜,负偏压不能低于90v ,功率不能低于200w 。 |
| 10. | A new type of josephson junction array using current biased voltage steps can provide highly stable and accurate voltages 一种新型的约瑟夫森结阵列使用了电流偏置的电压台阶可以提供高稳定度、高准确度的电压标准。 |