| 1. | Reactive sputtering source
反应溅射源 |
| 2. | Hysteresis in aluminum oxides films growth with pulsed reactive sputtering
铝靶脉冲反应溅射沉积氧化铝薄膜中的迟滞回线的研究 |
| 3. | The designed films of sio2 and sio2 / si are prepared on sample and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering method
利用射频磁控反应溅射法，在蓝宝石试片和半球形头罩上制备出所设计的sio _ 2和sio _ 2 si增透膜系。 |
| 4. | Through the technology of rf and dc reactive sputtering manufacture , h2s gas sensors have been developed on silicon substrate on which a heater made of pt were attached
通过交流和直流反应溅射，我们以硅基片(表面上有白金加热电极)为基底制作h _ 2s气敏元件。 |
| 5. | The thesis main parts are as followings : ( 1 ) the mechanical properties of the cnx thin film on the various substrate materials by dc magnetron reactive sputtering . ( 2 ) the study of the cnx film structure by x - ray diffraction
文章主要部分介绍、论述、总结了我在做毕业论文期间进行的五方面工作： ( 1 )用直流磁控反应溅射方法在各种材料衬底上沉积cnx超硬薄膜，研究在不同衬底对薄膜的力学性质的影响。 |
| 6. | 2 . fabricating uniphase fe _ 3o _ 4 film by dc magnetron sputtering , the influence of sputtering power , annealing temperature is discussed in detail and the optimum fabricating condition is found . 3 . the influence of ta buffer introduced to fe _ 3o _ 4 film is investigated in detail
2 .研究以磁控反应溅射法制备单相成分的fe _ 3o _ 4薄膜时,溅射功率、晶化温度对薄膜结构的影响,得到磁控反应溅射制备半金属fe _ 3o _ 4的最优条件。 |
| 7. | Three kinds of different methods , namely anode oxidation , micro - arc oxidation and dc reactive magnetron sputtering , were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film
本文分别采用阳极氧化法、微弧氧化法和磁控反应溅射沉积氮化铝薄膜的方法对功率电子器件用金属铝基板表面进行绝缘化处理。 |
| 8. | The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2 . we studied different surface progress . comparable with conventional method , the surface with nh4f cleaning step have superior thermal stability with hfo2 , nh4f cleaning step is introduced can reduces leakage current and eot ; 3
栅泄漏电流的减小可归于氧空位缺陷的减小，即高的溅射氧气氛和氧气氛退火有助于减小hfo _ 2栅介质中的氧空位缺陷； 4 )研究了反应溅射制备的hfo _ 2栅介质漏电流机制及其silc效应。 |
| 9. | In order to find a new way to prepare antibacterial fibers , photocatalytic oxidation of titanium dioxide ( tio2 ) has been used to modify the surface property of polymers in our experiment . tio2 films are deposited on polyethylene terephthalate ( pet ) substrates by means of rf magnetron sputtering using pure ti ( 99 . 99 % ) as the target and ar mixed with o2 as reactive gas
本文利用磁控反应溅射技术，以高纯度钛( ti )为靶材，氧气为活性气体，在pet基底上反应溅射沉积tio _ 2 ，将纳米tio _ 2的光催化氧化特性应用于高聚物表面改性，为进一步开发抗菌织物打下基础。首次在高分子pet基底上溅射沉积了氧化钛薄膜。 |
| 10. | ( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer . ( 5 ) by using the microhardness tester , we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate , film thickness , substrate temperature and substrate bias
( 5 )用直流磁控反应溅射法，以陶瓷作为衬底，对在ar和n2不同流量、不同膜厚、不同基片温度和对基片施加不同偏压下沉积的薄膜，用< wp = 4 >显微硬度计研究测试了不同工艺参数下的相应硬度。 |
