| 1. | The effects of different donor - doping on batio3 lptc thermal resistor
二氧化钛压敏电阻势垒高度的测定 |
| 2. | The manufacturing methods and ptc characteristics of batio3 ceramics doped with donor nb and acceptor mn
2压敏陶瓷势垒高度的测定 |
| 3. | While no evidence is found for the formation of er lii silicides at as - deposited surfaces
29ev以上，即相当于测得schottky势垒高度为0 |
| 4. | Therefore the current is small , the ratio of the slope of the effective potential to the current is not linear relevant simply
所以有效势倾斜斜率和其势垒高度对几率流都有共同影响。 |
| 5. | When the temperature t is smaller , even if there is the slope of the effective potential , most brownian particles ( motor proteins ) can not span the potential
( 3 )几率流不仅与有效势的整体倾斜的斜率有关，同时还与有效势的势垒高度有关。 |
| 6. | Microadding a appropriate amount of rare - earths oxide can decrease leakage current by means of raising the height of barrier potential and increasing grain resistivity of zinc oxide
添加微量稀土氧化物通过增大势垒高度和氧化锌晶粒电阻率来减小泄漏电流。 |
| 7. | The results indicate that carriers recombining and causing luminescence in two organic layers by traversing their interface . the influence of barrier height of transport layer on current density , recombination current and recombination efficiency of the devices is great
结果表明：双层器件的发光是载流子隧穿内界面后在两有机层中的复合发光，输运层的势垒高度对载流子电流密度、复合电流密度以及器件的复合效率影响很大。 |
| 8. | To analysis the principle of degradation and destruction , a reasonable relationship between the electrostatic potential and 1 - v characteristic parameters is raised ; a computation model for electron trap effect is originally proposed , which leads to a conception of critical trap electron density
本文首次建立了晶界势垒高度与伏安特性参数之间的关系，提出了陷阱效应在冲击老化过程的作用模型，引入了“临界陷阱电荷密度”的概念。 |
| 9. | As a result , the fermi level at the surface will shift towards the valence band maximum ( vbm ) . accordingly the band bending increases , and the surface depletion layer thickness enhances , therefore , the channel thickness reduces . this is the main factor resulting in the decrease of saturated drain - source current
表面费米能级向价带顶移动，能带弯曲加剧，肖特基势垒高度增加，表面耗尽层变厚，导电沟道变窄，是导致源漏饱和电流下降的主要因素。 |
