高压集成电路 meaning in Chinese
high voltage integrated circuit
high-voltage integrated circuit (hvic)
integrated circuit, high-voltage (hvic)
Examples
- As one of the key device in soi hvic , soi lateral high voltage device has been deeply investigated in this field
Soi高压横向耐压器件是高压集成电路的核心和关键,受到了国际上众多学者的关注。 - With its high reliability , small area , high - speed performance and low power dissipation , the high voltage integrated circuit ( hvic ) has unchangeable effect in the area of military affairs , aviation and nuclear energy
高压集成电路hvic ( highvoltageintegratedcircuits )具有可靠性高、体积小、速度快、功耗低等优点,在军事、航空航天及核能等领域有着不可替代的作用。 - Soi hvic ( silicon on insulator high voltage integrated circuit ) is the mainstream and trend of the power integrated circuit ( pic ) due to the improved no latch - up , reduced leakage current , perfect irradiation hardness , and improved insulation
Soi ( silicononinsulator )高压集成电路具有无闩锁、漏电流小、抗辐射、隔离性能好等优点,已成为功率集成电路( powerintegratedcircuit )的重要发展方向。 - And then some terminal techniques on pic , devices simulation theory , resurfs effect and medici software are presented . at last three kinds of high voltage power devices have been designed and simulated . based on the analysis of the breakdown voltage and electric field distribution of the high power devices , the key physics and structural parameters effects on the breakdown voltage are found
本文首先介绍了国内外功率集成电路的发展状况，然后介绍了高压集成电路中的几种终端技术、 resurf效应、器件模拟的基本理论和medici器件模拟软件，最后对三种型号的高压功率器件的击穿特性进行了分析和计算机模拟，指出了影响器件电压的关键的物理和结构参数，并对这三种型号的器件进行模拟，得出的电特性曲线和参数基本上与公司给出的一致。 - According to the thickness of the soi film , high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film . for thin - film soi - hvic , linear drift region doping profile is adopted to satisfy a certain breakdown - voltage , but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic , it can take advantage of cmos technology on silicon to obtain the high voltage
Soi高压集成电路根据顶层硅厚度可分为厚膜和薄膜两大类。为了满足一定的击穿电压,薄膜soi高压电路一般采用漂移区线性掺杂技术,但其工艺复杂,且自热效应严重;而厚膜soi高压集成电路可以通过移植体硅cmos技术来实现高压,但是由于其硅膜较厚,介质隔离成为厚膜soi高压集成电路的关键技术。