饱和电压 meaning in Chinese
saturation voltage
saturationvoltage
Examples
- The influence of the flexoelectric effect on the threshold voltage , the saturation voltage and the symmetry breaking parameter is discussed and calculated carefully
挠曲电效应对阈值电压、饱和电压和对称性破缺参量有重要影响。 - Applying the differential equation and boundary condition of the director tilt angle , the essential characters are discussed , which include the threshold voltage and the saturation voltage
根据满足的微分方程和边界条件，研究了液晶盒的基本性质，包括阈值电压和饱和电压。 - Finally , the influence the radius of the electron beam , current of the electron beam , the acceleration voltage and the geometrical dimension of the slow - wave structure on small signal gain are discussed
研究表明：对应最大的增益，有一饱和电压存在；小信号增益随电子注电流的增大而增大；也随电子注半径的增加而增大。 - We have proved that the surface energy induced by the flexoelectric effect has the same form but inverse sign at the up or down substrate . the expressions of the threshold voltage and the saturated voltage which have correlation with e1 + e3 ( the flexoelectric coefficients )
给出了阈值电压和饱和电压的表达式，它们都与e _ 1 + e _ 3 (挠曲电系数)有关，即挠曲电效应将导致阈值电压和饱和电压的变化。 - The threshold voltage decreases when the anchoring energy decreases and it increases as the tilt angle increases because of k33 > k22 . the saturation voltage decreases when the anchoring energy decreases and it increases as the tilt angle reduces due to k22 < k11
由于k _ ( 33 ) k _ ( 22 ) ，阈值电压随着锚定能的减小而减小，随着预倾角的增大而增大：饱和电压随着锚定能的减小而减小，随着预倾角的减小而增大，而这要归因于k _ ( 22 ) k _ ( 11 ) 。