集电结 meaning in Chinese
collector base junction
collector junction
collector junonon
Examples
- The collector junction biased in the reverse direction .
集电结是反向编置。 - The main works are as the follows . in view of the contradiction among frequency , output power and dissipation power , propose deep - trench junction termination structure filling with isolated materials and collector - combed ( base - combed ) structure
主要工作包括以下几个方面：针对频率与功率、功耗的矛盾，提出了绝缘深阱结终端结构和梳状集电结(基区)结构。 - Experimental sample dct375 with collector - combed structure has better parameter such as icm , pq , pd and / r etc . than traditional - structure devices and overseas devices of the same kind . collector - combed structure technology opens up a new way for the further research of new high - frequency , microwave power devices
研制出的梳状集电结(基区)结构试验管dct375 ，其最大电流容量、最大输出功率、最大耗散功率以及频率特性等电参数明显比传统结构器件和国外同类产品有大的提高。 - In this thesis two reverse - bias electrical stress methods were used to investigate the reliability of the devices . one is a typical of oc stress method with collector open and reverse - bias emitter - base junction . another one , a new technique , is fc stress method with forward - bias collector - base junction and reverse - bias emitter - base junction
本论文采用两种反偏电应力方法考察器件的可靠性，一种为传统的oc应力（集电极开路，发射结反向偏置）方法，另一种为新的方法fc应力（集电结正向偏置，发射结反向偏置）方法。 - And the results of calculation and numerical simulation indicate , without increasing the intrinsic collector - junction area of power devices , collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter , improve heat - dissipating method of each cell of the chip , enhance the distribution uniformity of junction temperature and current of each cell of the chip , reduce the thermal resistance and raise the dissipation power pd and output power p0 , fairly well relax the contradiction among frequency , out - put power and dissipation power of the devices , and further improve the devices " property against second breakdown
而计算分析和二维数值模拟分析结果表明：梳状集电结(基区)结构在不增加器件本征集电结面积的条件下，增大了器件的本征散热面积和基区周长，改进了每个子器件单元内的散热方式，提高了单元内结温和电流分布的均匀性，降低了器件的热阻，增大了器件的耗散功率和输出功率，较好地缓解了目前传统结构中频率与功率、功耗的矛盾，并有利于改善器件抗二次击穿的性能。