集电区 meaning in Chinese
collecting zone
collector region
Examples
- Thus , it is believed that in subsequent high - temperature process , the base boron will outdiffuse very easily into emitter and collector , which will form a parasitic barrier for the electrons when moving from emitter into base and result in performance degradation of the device
这样在后续的高温工艺中就会引起基区的杂质外扩到集电区和发射区，产生电子势垒，导致器件性能的严重退化。 - 1 、 through the theoretical analysis and the medici simulation , according to the design directive , the structural parameters are designed comprehensively , including the dopant concentration and the depth of the emitter , the base dopant concentration and the depth ( especially the ge ratio ) , the dopant concentration and the depth of the collector
主要工作是: 1 、通过理论分析和medici模拟,综合设计得出符合设计指标的结构参数,主要包括:发射区的掺杂浓度和厚度?基区的掺杂浓度和厚度及基区中ge的组分比?集电区的掺杂浓度和厚度。