隔离工艺 meaning in Chinese
isolation technology
Examples
- In order to study the influence of different process on the threshold voltage uniformity , gaas mesfets are fabricated both in recessed - gate process and planar selectively implanted process
分别对采用隔离注入挖槽工艺和平面选择离子注入自隔离工艺制备的gaasmesfet阈值电压均匀性进行了比较研究。 - Results show that the sidegating threshold voltage is higher when adjacent devices are isolated by boron implanted , which means that boron implantation significantly improves the electronical isolation between devices and reduces the sidegating effect
结果表明，采用注入隔离工艺制备的mesfet的旁栅效应比采用自隔离工艺制备的mesfet的旁栅效应要小。这说明，采用注入隔离可以形成更好的器件隔离，减小器件的旁栅效应。 - We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive , hysteresis , influence of sidegating effect on mesfet threshold voltage , influence of drain - source voltage on sidegating threshold voltage , influence of exchanging drain and source electrode on sidegating threshold voltage , relation between sidegating threshold voltage and the distance between side - gate and mesfet , relation between sidegating effect and floating gate , and so on
本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、 mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。