阈值电流密度 meaning in Chinese
threshold current density
Examples
- The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density , high characteristic temperature and high cod limit , which make ld lasers achieve higher output power and longer ufe . therefore , ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers
Ingaas / gaas应变量子阱激光器具有级低的阈值电流密度、较高的特性温度和较高的光学灾变损伤阈值，这使得激光器具有更高的输出功率和更长的寿命。因此ingaas / gaas应变量子阱结构可以用于大功率半导体激光器的制备。 - For our laboratory is changing toward industrialization , a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done . how the parameters , such as threshold current density , slope efficiency , fwhm and spectrum width , are influenced and how much the influence is , are discussed by the numbers . the effective means how to improve a certain performance parameter are purposed too
由于本实验室正处于由试验研究向产业化迈进的阶段，针对常规ingaas / gaas / algaas量子阱激光器做了很多工作，文中系统论述了常规量子阱激光器的各项性能参数?阈值电流密度、斜率效率、远场发散角、光谱线宽等的影响因素及改进的有效办法，并针对激光器p ? i线性度不好、远场发散角出现多瓣的现象，通过理论分析找出原因所在并进行了改进，有效解决了以上问题。 - The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance , it has longe - lived , low threshold current density , high efficiency , high luminosity and excellent monochromatic , coherence , directionality , etc . the high - power semiconductor laser is widely applied to the fields , such as military , industrial machining , communication , information processing , medical treatment , etc . the material ' s epitaxy is the foundation of the whole laser ' s fabricating , and it has important influence on the optics and electricity performance about the laser
大功率半导体量子阱激光器是一种性能优越的发光器件，具有寿命长、阈值电流密度低、效率高、亮度高以及良好的单色性、相干性、方向性等特点，广泛应用于军事、工业加工、通信及信息处理、医疗保健等领域。材料的外延生长是整个激光器器件制作的基础，对器件的光学和电学性能有着重要的影响，生长不出优质的材料体系，获得高性能的器件就无从谈起，因此，材料的外延生长便成为了整个半导体激光器制作过程之中的重中之重。 - Based on the above , we have made a research on the fabrication technology of two - dimensionally ( 2d ) arrayed surface - emiting lasers , and have obtained two - dimensionally arrayed laser primarily with lower threshold current density and higher power output , which will promote the achievement of higher reliability , lower threshold current arrayed surface - emiting lasers laser for high power output
在此基础上进行了面发射半导体激光器二维( 2d )列阵的制备研究，初步获得了具有较低阈值电流密度和较高功率的45偏转镜面发射阵列半导体激光器，为研制高可靠性、高功率、低阈值电流的面发射阵列半导体激光器奠定了一定的基础。