铁电性能 meaning in Chinese
ferroelectric properties
Examples
- Ferroelectric properties of optically active polymers
旋光性聚合物的铁电性能 - When the time of heat preservation prolonged , the intensity of most orientation of perovskite phase became stronger , and the full width at half maximum ( fwhm ) decreased . when the time of heat preservation was 80 seconds , the intensity of ( 100 ) and ( 110 ) orientation began to decrease
循环次数从1次增加到3次, plt薄膜的( 100 )和( 200 )峰的衍射强度逐渐增强,薄膜的结晶性提高,铁电性能逐渐增强,循环4次溅射后,薄膜的结晶性和铁电性开始下降。 - 4 . mixture was made of chiral additive and liquid crystal polymer , which properties were studied . whether the mixture has ferroelectricity has been discussed , which would establish some bases for the research and application of the liquid crystal display materials and nonlinear optical materials in future
将液晶手性添加剂和液晶聚合物共混，并研究了共混物的性能，探讨了共混型丙烯酸酯类液晶聚合物的铁电性能，为将来的液晶显示材料及非线形光学材料的研究及应用奠定了基础。 - In this work , the influences of fabrication process on microstructure , dielectric properties , ferroelectric properties and pyroelectric properties of plt films have been studied . plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ) . with the help of atom force microscopy ( afm ) , x - ray diffraction ( xrd ) and some other apparatus , it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies . with the increase of substrate temperature , the dielectric constant of plt films increased
Afm 、 xrd以及性能测试结果表明:较低的基片温度有利于形成表面均匀致密的薄膜,且薄膜的表面粗糙度均方根较小;随着基片温度的升高,经过快速退火的plt薄膜的介电常数逐渐增大;相比于传统退火,快速退火缩短了退火时间,提高了薄膜的介电和铁电性能;快速退火随着保温时间的延长,大部分钙钛矿结构的特征峰的峰强增大,半高宽减小,峰形越来越尖锐,但当保温时间为80s的时候, ( 100 )和( 110 )峰的强度有所下降,因此保温时间在60s较为适宜。 - But its high leakage current and poor retention is the main obstacle to its application . improving the quality of ferroelectric thin films and avoiding the reaction and diffusion between f - s interfaces is one of the crucial keys to overcome this problem . that is to say that the preparation and properties of ferroelectric thin films is compatible with the semiconductor integrated circuit
但是其漏电流过大和保持力差成为制约其实用化的最大障碍，攻克这一难题的关键之一就在于铁电薄膜质量的进一步提高，尽量减少或者避免f - s界面的互扩散，也就是说铁电薄膜的制备工艺和各项铁电性能必须与半导体集成工艺兼容。