跨导线 meaning in Chinese
transconductor
Examples
- The factors limiting the frequency band of the wide - band amplifier are introduced . through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics , a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit , current pattern circuit and frequency characteristics are analyzed . according to the linear theory of transconductance which is applied in the bit circuit , the current pattern amplifier circuit , current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
介绍了限制宽带放大器频带宽度的因素，通过分析mosfet的本征参数、寄生参数对频率特性的影响，提出了采用短沟器件、使mosfet工作在饱和区、抬高栅源电压等提高mosfet特征频率的方法；分析了不同电路组态对放大器频率特性的影响、节点电压对电压模电路、电流模电路频率特性的不同影响，根据应用于双极晶体管电路的跨导线性原理，提出了采用mosfet构成的电流模放大电路、电流传输电路、输出电路以及由它们所组成的宽带放大器，获得了良好的频率响应。 - After introduction of the tranlinear loop principal , the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower . as for modern integrated circuit , the model of mos transistor , the active resistance and the current mirror integrated circuit formed by mos transistor are introduced . the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation
针对现代集成电路的工艺,本文对mos晶体管的工作原理进行了简要的叙述,讨论了有源电阻和电流镜的实现方法,并利用mos晶体管的亚阈值特性组成混合跨导线性回路完成对应的电压跟随器的设计,推导出了基于cmos技术的电流控制传送器。